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Author:

Zhang, Min (Zhang, Min.) | Qin, Fei (Qin, Fei.) | Chen, Si (Chen, Si.) | Dai, Yanwei (Dai, Yanwei.) (Scholars:代岩伟) | Jin, Yifan (Jin, Yifan.) | Chen, Pei (Chen, Pei.) | An, Tong (An, Tong.) | Gong, Yanpeng (Gong, Yanpeng.)

Indexed by:

EI Scopus SCIE

Abstract:

The thermomechanical reliabilities of TSV based structures are closely affected by the protrusion deformation, stress-strain constitutive behavior and microstructure evolution of TSV-Cu under various thermal loadings. In this study, the stress-strain constitutive curves of TSV-Cu under various annealing conditions considering holding time effect are acquired by the nanoindentation test and finite element (FE) reverse analysis. The yielding softening in stress-strain curves is found if the holding time is less than 90 min. However, the stable stress-strain curves are obtained as holding time exceeds 90 min. Furthermore, the mechanisms of softening and stability in stress-strain curves are revealed by observing the microstructure evolution of TSV-Cu with a wide range of holding time. In addition, the relationships among protrusion height, constitutive curves as well as micro-structure parameter of TSV-Cu with different annealing holding time are built. This study provides an intrinsic insight on the correlations of deformation, constitutive curves, and microstructure for TSV-Cu annealing pro-cesses considering holding time effect.

Keyword:

Protrusion Stress-strain constitutive curve Annealing Microstructure Through Silicon Via copper (TSV-Cu)

Author Community:

  • [ 1 ] [Zhang, Min]Beijing Univ Technol, Inst Elect Packaging Technol & Reliabil, Fac Mat & Mfg, Beijing 100124, Peoples R China
  • [ 2 ] [Qin, Fei]Beijing Univ Technol, Inst Elect Packaging Technol & Reliabil, Fac Mat & Mfg, Beijing 100124, Peoples R China
  • [ 3 ] [Dai, Yanwei]Beijing Univ Technol, Inst Elect Packaging Technol & Reliabil, Fac Mat & Mfg, Beijing 100124, Peoples R China
  • [ 4 ] [Jin, Yifan]Beijing Univ Technol, Inst Elect Packaging Technol & Reliabil, Fac Mat & Mfg, Beijing 100124, Peoples R China
  • [ 5 ] [Chen, Pei]Beijing Univ Technol, Inst Elect Packaging Technol & Reliabil, Fac Mat & Mfg, Beijing 100124, Peoples R China
  • [ 6 ] [An, Tong]Beijing Univ Technol, Inst Elect Packaging Technol & Reliabil, Fac Mat & Mfg, Beijing 100124, Peoples R China
  • [ 7 ] [Gong, Yanpeng]Beijing Univ Technol, Inst Elect Packaging Technol & Reliabil, Fac Mat & Mfg, Beijing 100124, Peoples R China
  • [ 8 ] [Qin, Fei]Beijing Univ Technol, Fac Mat & Mfg, Beijing Key Lab Adv Mfg Technol, Beijing 100124, Peoples R China
  • [ 9 ] [Dai, Yanwei]Beijing Univ Technol, Fac Mat & Mfg, Beijing Key Lab Adv Mfg Technol, Beijing 100124, Peoples R China
  • [ 10 ] [Chen, Pei]Beijing Univ Technol, Fac Mat & Mfg, Beijing Key Lab Adv Mfg Technol, Beijing 100124, Peoples R China
  • [ 11 ] [An, Tong]Beijing Univ Technol, Fac Mat & Mfg, Beijing Key Lab Adv Mfg Technol, Beijing 100124, Peoples R China
  • [ 12 ] [Gong, Yanpeng]Beijing Univ Technol, Fac Mat & Mfg, Beijing Key Lab Adv Mfg Technol, Beijing 100124, Peoples R China
  • [ 13 ] [Chen, Si]China Elect Prod Reliabil & Environm Testing Res I, Sci & Technol Reliabil Phys & Applicat Elect Compo, Guangzhou 510610, Peoples R China

Reprint Author's Address:

  • [Qin, Fei]Beijing Univ Technol, Inst Elect Packaging Technol & Reliabil, Fac Mat & Mfg, Beijing 100124, Peoples R China;;[Dai, Yanwei]Beijing Univ Technol, Inst Elect Packaging Technol & Reliabil, Fac Mat & Mfg, Beijing 100124, Peoples R China;;

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Source :

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

ISSN: 1369-8001

Year: 2023

Volume: 158

4 . 1 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:26

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 3

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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