We　obtained　high　n-type　conductivity　and　low　donor　ionization　energy　for　an　AlN　film　grown　on　SiC　by　Si　ion　implantation.　The　room　temperature　conductivity　reaches　0.26　omega-　1　cm-1,　and　the　donor　ionization　energy　is　only　112　meV,　which　is　the　best　result　of　Si-implanted　heteroepitaxial　AlN.　The　lattice　damage　caused　by　ion　implantation　can　be　almost　completely　repaired　by　annealing　at　1330　degrees　C　for　2　h.　X-ray　photoelectron　spectroscopy　(XPS)　results　show　few　O　impurity　in　the　sample.　The　low　donor　ionization　energy　is　attributed　to　avoiding　the　introduction　of　O　impurities　and　the　mitigation　of　self-compensating　effect.　These　results　show　the　great　potential　of　Si-implanted　heteroepitaxial　AlN　for　device　applications.