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Abstract:
In recent years, use of photonic crystals has been recognized as a viable approach to resolve the contradiction between operating speed and light absorption in vertical-structure photodiodes. In this paper, we present a photonic crystal that enhances the responsivity of a GeSn pin photodiode in the near-infrared region of the spectrum. Additionally, the effects of this photonic crystal on the most important properties of the GeSn pho-todiodes are studied. Based on measurement and analysis of the device's dark current, responsivity, and speed characteristics, the photonic crystal structure reduces the dark current by approximately 57%, increases the responsivity at 1550 nm and 1650 nm by factors of 2.4 and 3.9, respectively, and increases the 3dB bandwidth at 1550 nm by a factor of approximately 2.6. These results demonstrate that photonic crystals have good appli-cation value for solution of the contradiction between the light absorption and operating speed characteristics of high-speed photodiodes.
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OPTICS AND LASER TECHNOLOGY
ISSN: 0030-3992
Year: 2023
Volume: 163
5 . 0 0 0
JCR@2022
ESI Discipline: ENGINEERING;
ESI HC Threshold:19
Cited Count:
SCOPUS Cited Count: 5
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 1
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