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Author:

Li, Chong (Li, Chong.) | Gao, Xinyuan (Gao, Xinyuan.) | Guan, Kai (Guan, Kai.) | Li, Weize (Li, Weize.) | Ma, Ziyi (Ma, Ziyi.) | Xu, Gang (Xu, Gang.) | Li, Zhanjie (Li, Zhanjie.) | Yang, Shuai (Yang, Shuai.) | Wang, Nan (Wang, Nan.) | Xue, Chunlai (Xue, Chunlai.)

Indexed by:

EI Scopus SCIE

Abstract:

In recent years, use of photonic crystals has been recognized as a viable approach to resolve the contradiction between operating speed and light absorption in vertical-structure photodiodes. In this paper, we present a photonic crystal that enhances the responsivity of a GeSn pin photodiode in the near-infrared region of the spectrum. Additionally, the effects of this photonic crystal on the most important properties of the GeSn pho-todiodes are studied. Based on measurement and analysis of the device's dark current, responsivity, and speed characteristics, the photonic crystal structure reduces the dark current by approximately 57%, increases the responsivity at 1550 nm and 1650 nm by factors of 2.4 and 3.9, respectively, and increases the 3dB bandwidth at 1550 nm by a factor of approximately 2.6. These results demonstrate that photonic crystals have good appli-cation value for solution of the contradiction between the light absorption and operating speed characteristics of high-speed photodiodes.

Keyword:

Photonic crystal Optical communication Germanium tin photodiode

Author Community:

  • [ 1 ] [Li, Chong]Beijing Univ Technol, Dept Informat, Beijing 100124, Peoples R China
  • [ 2 ] [Gao, Xinyuan]Beijing Univ Technol, Dept Informat, Beijing 100124, Peoples R China
  • [ 3 ] [Li, Weize]Beijing Univ Technol, Dept Informat, Beijing 100124, Peoples R China
  • [ 4 ] [Ma, Ziyi]Beijing Univ Technol, Dept Informat, Beijing 100124, Peoples R China
  • [ 5 ] [Xu, Gang]Beijing Univ Technol, Dept Informat, Beijing 100124, Peoples R China
  • [ 6 ] [Li, Zhanjie]Beijing Univ Technol, Dept Informat, Beijing 100124, Peoples R China
  • [ 7 ] [Yang, Shuai]Beijing Univ Technol, Dept Informat, Beijing 100124, Peoples R China
  • [ 8 ] [Guan, Kai]Nations Technol Inc, Xian 710000, Peoples R China
  • [ 9 ] [Wang, Nan]Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
  • [ 10 ] [Xue, Chunlai]Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

Reprint Author's Address:

  • [Xue, Chunlai]Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China;;

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Source :

OPTICS AND LASER TECHNOLOGY

ISSN: 0030-3992

Year: 2023

Volume: 163

5 . 0 0 0

JCR@2022

ESI Discipline: ENGINEERING;

ESI HC Threshold:19

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 5

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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