In　silicon　carbide　(SiC)　planar　insulated-gate　bipolar　transistor　(IGBT),　a　large　distance　between　neighboring　p-bodies　is　beneficial　to　enhance　the　on-state　conductivity　modulation,　but　will　expose　the　gate　oxide　to　high　electric　field　in　off-state.　With　p-bodies　placed　closer,　the　gate　oxide　field　is　reduced,　but　the　conductivity　modulation　is　suppressed.　In　this　work,　a　new　SiC　planar　IGBT　with　oxide　shield　is　proposed　and　studied　by　TCAD　simulations.　The　proposed　SiC　IGBT　achieves　improved　trade-off　between　on-state　voltage　drop　(V-ON)　and　maximum　gate　oxide　electric　field　(Eox-m).　When　a　quite　larger　distance　between　neighboring　p-bodies　is　adopted　in　the　proposed　SiC　IGBT,　a　low　VON　is　obtained,　while　the　Eox-m　can　be　kept　at　a　small　value　with　the　oxide　shielding　structures　protecting　the　gate　oxide.　Switching　characteristics　are　also　studied,　and　the　proposed　SiC-IGBT　delivers　much　better　trade-off　between　turn-off　energy　loss　(E-OFF)　and　VON　than　the　conventional　SiC　planar　IGBT.