A　fabrication　method　for　high　quality　flexible　aluminum　nitride　piezoelectric　thin　films　based　on　micro-nano　fabrication　technology　is　reported　in　this　paper.　Molybdenum　(Mo)/aluminum　nitride　(AlN)/aluminum　(Al)　structure　was　prepared　on　silicon(100)　by　sputtering.　Then,　deep-reactive　ion　etching　technology　was　used　to　remove　the　silicon　material　used　for　support,　then　the　Mo/AlN/Al　flexible　sandwich　film　was　obtained.　The　full-width　at　half-maximum　of　the　AlN　film　(002)　peak　before　and　after　removal　of　silicon　was　only　1.47　degrees　and　1.49　degrees,　respectively.　No　obvious　cracks　in　the　film　under　bending　conditions　were　observed　with　a　scanning　electron　microscope.　Capacitance-voltage　(C-V)　test　results　showed　that　the　capacitance　curve　of　the　sandwich　structure　was　consistent　with　that　of　the　double-sided　Schottky　junction.　The　flexible　piezoelectric　film　with　an　active　area　of　2　x　2　mm(2)　exhibited　an　average　peak-to-peak　generated　voltage　of　0.6　V　in　energy　harvesting　tests,　which　indicates　that　the　method　could　be　used　to　fabricate　high　quality　flexible　energy　collectors　based　on　AlN　film.　The　preparation　scheme　in　this　paper　is　compatible　with　integrated　circuit　processes　and　simple　to　implement,　which　lays　a　foundation　for　the　wide　application　of　flexible　piezoelectric　devices.