In　this　paper,we　have　study　a　3.3kv　silicon　power　diode　BDIH　with　double　injection　holes　on　the　back　side,　which　structure　with　an　inner　N+　layer　in　the　back　P　region　of　the　CIBH.　Based　on　Sentaurus-TCAD　software,　we　simulate　the　reverse　recovery　process　of　BDIH　diodes　and　conventional　PIN　diodes　when　the　both　diodes　work　on　the　condition　that　real　current　lower　than　standard　current.　The　BDIH　structure　combines　the　advantages　of　RFC　diodes　and　CIBH　diodes,　and　the　performance　of　it　is　better　than　that　of　conventional　diodes,　obvirously　improving　the　softness　of　reverse　recovery　at　small　current　densities.　©　2023　SPIE.