Traditional　packaging　materials　are　suffering　from　poor　high-temperature-using,　however,　the　SiC　own　ideal　coefficient　of　thermal　expansion　(CTE)　and　thermal　conductivity　(TC),　and　at　the　same　time,　it　can　be　used　in　high　temperatures　meeting　the　requirement　of　the　advanced　electronic　packaging.　But　traditionally,　SiC　is　made　at　a　high　temperature　and　with　a　complex　producing　process.　Some　researchers　are　focused　on　SiC　with　some　Al　additions,　but　we　know　that　Al　will　volatilize　when　the　samples　are　heated　over　than　melt-point,　so　this　method　would　also　strict　its　applications.　Other　works　had　been　taken　on　diamond　addition　to　realize　packaging　function,　but　this　method　needed　a　high-temperature　infiltration　process　too.　In　fact,　the　non-method　above　was　economic　or　convenient　to　manufacture　in　nowadays　industry　practice.　Fortunately,　a　new　way　to　gain　dense　SiC　at　a　very　low　temperature　in　an　open　environment　had　been　gotten　by　our　group.　©　2023　SPIE.　All　rights　reserved.