In　this　work,　we　investigated　the　trapping　behaviors　in　the　Schottky-type　p-GaN　gate　high-electron-mobility　transistors　(HEMTs)　under　positive　gate　bias　using　the　current-transient　method.　By　excluding　the　trapping　effect　introduced　by　the　measurement　voltages,　the　actual　recovery　curves　of　drain　transient　current　under　different　gate　filling　voltages　and　temperatures　were　extracted.　The　impacts　of　electron　trapping,　hole　injection,　and　electron-hole　recombination　on　the　threshold　voltage　instability　can　be　effectively　distinguished　according　to　the　results　of　drain　current　variations　under　different　gate　stresses.　In　addition,　the　dynamic　drain　leakage　current　was　monitored　to　confirm　the　electron-hole　recombination　and　optical　pumping　of　trapped　electrons.　The　properties　of　three　electron　traps　can　be　obtained　based　on　the　time　constant　spectrum　(TCS),　and　a　database　of　the　gate-trapping　behaviors　in　the　GaN-based　devices　was　constructed.　The　combined　results　may　provide　a　basis　for　a　better　understanding　of　the　threshold　voltage　instability　under　positive　gate　stress　in　the　p-GaN　gate　HEMTs.