The　non-collinear　antiferromagnetic　Weyl　semimetal　Mn3X　(X　=　Ga,　Ge,　Sn)　system　has　attracted　a　lot　of　attentions　owing　to　its　robust　anomalous　Hall　effect　(AHE),　large　spin　Hall　angle　and　small　net　magnetization　at　room　temperature.　The　high　spin-charge　interconversion　efficiency　makes　it　a　super　candidate　in　topological　antiferromagnetic　spintronic　devices,　which　could　facilitate　ultra-fast　operation　of　high-density　devices　with　low　energy　consumption.　In　this　work,　we　have　realized　to　obtain　different　chiral　spin　structures　in　Heusler　alloy　Mn3Ge　thin　films,　which　originate　from　different　crystalline　orientations.　The　high-quality　(0002)-　and　(20　(2)　over　bar0)-oriented　single　phase　hexagonal　Mn3Ge　films　are　achieved　by　controllable　growth,　annealing　process　and　ion　implantation.　The　various　magnetic　properties　and　AHE　behaviors　are　observed　along　a　and　c　crystal　axes,　equivalent　to　magnetic　field　in　and　out　of　the　inverse　triangular　spin　plane.　The　observation　demonstrates　the　manipulation　of　crystal　structure　accompanied　with　chiral　spin　order　in　a　non-collinear　antiferromagnetic　Mn3Ge　film,　which　is　induced　by　energy　conversion　and　defect　introduction.　The　in　situ　thermal　treatment　induces　crystal　phase　rotation　up　to　90　degrees　and　robust　AHE　modulation,　which　is　significantly　important　and　highly　desirable　for　flexible　spin　memory　device　applications.