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作者:

Wang, Xiaohua (Wang, Xiaohua.) | Li, Jingzhen (Li, Jingzhen.) | Yan, Yong (Yan, Yong.) | You, Congya (You, Congya.) | Li, Jingfeng (Li, Jingfeng.) | Wen, Tao (Wen, Tao.) | Liu, Ming (Liu, Ming.) | Yu, Songlin (Yu, Songlin.) | Zhang, Yongzhe (Zhang, Yongzhe.) (学者:张永哲)

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EI Scopus SCIE

摘要:

We investigate two passivation methods for long-wavelength infrared type-II InAs/GaSb superlattice (T2SL) photodiodes with the P pi BN structure containing an InAs/AlSb hole barrier layer. In order to eliminate the surface defects of T2SL better to further reduce the surface dark current, anodic vulcanization and SiO2 composite passivation method is adopted to optimize the original SiO2 passivation method. At 77 K, the I-V curve of the devices under the two passivation methods are obtained. Compared with passivation-only SiO2, the dark current density of the anode sulfide and SiO2 composite passivation detector is reduced by one order of magnitude, and the surface resistivity is effectively improved by an order of magnitude. Additionally, the composite passivation method not only improves the uniformity of the device, but also prevents the peeling of the S layer to improve the quality of passivation. This work offers a stable and high-quality passivation method, and it could be popularized passivation in the field of optics, electronics, optoelectronics, and switching devices.

关键词:

Photodiodes Passivation Long-wavelength GaSb InAs

作者机构:

  • [ 1 ] [Wang, Xiaohua]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China
  • [ 2 ] [Li, Jingzhen]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China
  • [ 3 ] [Yan, Yong]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China
  • [ 4 ] [Zhang, Yongzhe]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China
  • [ 5 ] [Li, Jingzhen]Beijing Univ Technol, Fac Informat Technol, Key Lab Optoelect Technol, Educ Minist China, Beijing 100124, Peoples R China
  • [ 6 ] [Zhang, Yongzhe]Beijing Univ Technol, Fac Informat Technol, Key Lab Optoelect Technol, Educ Minist China, Beijing 100124, Peoples R China
  • [ 7 ] [You, Congya]North China Res Inst Electroopt, Beijing 100015, Peoples R China
  • [ 8 ] [Li, Jingfeng]North China Res Inst Electroopt, Beijing 100015, Peoples R China
  • [ 9 ] [Wen, Tao]North China Res Inst Electroopt, Beijing 100015, Peoples R China
  • [ 10 ] [Liu, Ming]North China Res Inst Electroopt, Beijing 100015, Peoples R China
  • [ 11 ] [Yu, Songlin]North China Res Inst Electroopt, Beijing 100015, Peoples R China

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来源 :

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

ISSN: 1369-8001

年份: 2023

卷: 164

4 . 1 0 0

JCR@2022

ESI学科: MATERIALS SCIENCE;

ESI高被引阀值:26

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