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作者:

Wang, Hengran (Wang, Hengran.) | Wu, Qiang (Wu, Qiang.) | Cui, Jinling (Cui, Jinling.) | Zheng, Xin (Zheng, Xin.)

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摘要:

With the improvement of the performance of InGaAs short-wave infrared (SWIR) detector, the application of InGaAs short-wave infrared (SWIR) detector is more and more widely in the fields of low-light imaging, precision guidance, space detection, material analysis, industrial process control, biomedicine, etc. Due to the military sensitivity in the application field of HF infrared detectors, foreign HF infrared detectors with high resolution and high frame rate are prohibited from domestic use according to relevant regulations. Therefore, it is of practical significance to give full play to the performance of domestic InGaAs short-wave infrared detector through circuit design. In this paper, a peripheral circuit scheme which can support 8-channel parallel output is proposed for an InGaAs 640×512 15μm short-wave infrared detector manufactured by GHOPTO, and the key circuits are simulated and verified by LT Spice. The simulation results show that this scheme can give full play to the performance of this short-wave infrared detector, and achieve the maximum 358Hz frame frequency 640×512 image output. © 2023 Copyright held by the owner/author(s).

关键词:

Semiconductor alloys Infrared radiation Gallium alloys Timing circuits Integrated circuit manufacture Semiconducting indium gallium arsenide SPICE Indium alloys

作者机构:

  • [ 1 ] [Wang, Hengran]Beijing University of Technology, Beijing, China
  • [ 2 ] [Wu, Qiang]Beijing University of Technology, Beijing, China
  • [ 3 ] [Cui, Jinling]Beijing University of Technology, Beijing, China
  • [ 4 ] [Zheng, Xin]Beijing University of Technology, Beijing, China

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年份: 2023

页码: 800-808

语种: 英文

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