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This study presents an investigation of high-voltage enhancement-mode p-GaN gate HEMTs on a sapphire substrate. The breakdown voltage of the devices shows a linear relationship with the LGD. For LGD=27 μm, the device exhibits a high breakdown voltage of 1412 V. The threshold voltage is 0.9 V. The Ron is17.7\ Ωmm, and the specific on-resistance Rsp is 6.73 mΩcm2. To measure the depletion region directly for high-voltage devices, depletion-testing structures were fabricated alongside the HEMTs. The depletion lengths were determined based on the I-V characteristics of the structures, with the pinch-off voltage of the I-V characteristics correlated to the depletion length. Additionally, using pulse waveforms as the gate control signals, the formation of the depletion region under dynamic conditions was revealed. © 2023 IEEE.
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ISSN: 1063-6854
年份: 2023
卷: 2023-May
页码: 127-130
语种: 英文
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