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作者:

Cui, Jiawei (Cui, Jiawei.) | Wu, Yanlin (Wu, Yanlin.) | Yang, Junjie (Yang, Junjie.) | Yu, Jingjing (Yu, Jingjing.) | Li, Teng (Li, Teng.) | Yang, Xuelin (Yang, Xuelin.) | Shen, Bo (Shen, Bo.) | Wang, Maojun (Wang, Maojun.) | Wei, Jin (Wei, Jin.)

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EI Scopus

摘要:

This study presents an investigation of high-voltage enhancement-mode p-GaN gate HEMTs on a sapphire substrate. The breakdown voltage of the devices shows a linear relationship with the LGD. For LGD=27 μm, the device exhibits a high breakdown voltage of 1412 V. The threshold voltage is 0.9 V. The Ron is17.7\ Ωmm, and the specific on-resistance Rsp is 6.73 mΩcm2. To measure the depletion region directly for high-voltage devices, depletion-testing structures were fabricated alongside the HEMTs. The depletion lengths were determined based on the I-V characteristics of the structures, with the pinch-off voltage of the I-V characteristics correlated to the depletion length. Additionally, using pulse waveforms as the gate control signals, the formation of the depletion region under dynamic conditions was revealed. © 2023 IEEE.

关键词:

Sapphire Gallium nitride Substrates Threshold voltage Electric breakdown III-V semiconductors High electron mobility transistors

作者机构:

  • [ 1 ] [Cui, Jiawei]School of Integrated Circuits, Peking University, Beijing, China
  • [ 2 ] [Wu, Yanlin]School of Integrated Circuits, Peking University, Beijing, China
  • [ 3 ] [Yang, Junjie]School of Integrated Circuits, Peking University, Beijing, China
  • [ 4 ] [Yu, Jingjing]School of Integrated Circuits, Peking University, Beijing, China
  • [ 5 ] [Li, Teng]School of Integrated Circuits, Peking University, Beijing, China
  • [ 6 ] [Li, Teng]College of Microelectronics, Beijing University of Technology, Beijing, China
  • [ 7 ] [Yang, Xuelin]School of Physics, Peking University, Beijing, China
  • [ 8 ] [Shen, Bo]School of Physics, Peking University, Beijing, China
  • [ 9 ] [Wang, Maojun]School of Integrated Circuits, Peking University, Beijing, China
  • [ 10 ] [Wei, Jin]School of Integrated Circuits, Peking University, Beijing, China

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ISSN: 1063-6854

年份: 2023

卷: 2023-May

页码: 127-130

语种: 英文

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SCOPUS被引频次: 13

ESI高被引论文在榜: 0 展开所有

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