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作者:

Guo, Na (Guo, Na.) | Hui, Yongling (Hui, Yongling.) | Cai, Jinlu (Cai, Jinlu.) | Jiang, Menghua (Jiang, Menghua.) | Lei, Hong (Lei, Hong.) | Li, Qiang (Li, Qiang.) (学者:李强)

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摘要:

At present, 1.5 μm LD pumped Er-glass passively Q-switched micro-laser is a popular research direction in military laser ranging. Achieving high repetition rate and single pulse energy are very important indicators. In this paper, a kHz erbium-ytterbium co-doped phosphate glass passively Qswitched microchip laser for laser ranging was reported. The laser was pumped by a single diode with a center wavelength of 940 nm and erbium-ytterbium co-doped phosphate glass(Er3+, Yb3+: glass) as the gain medium, CO2+: MgAl2O4 (CO: MALO) as the saturable absorber. By analyzing the influence of the pump spot radius on the mode-matching, the pump spot radius was optimized. The effects of the initial transmittance (T0) of saturable absorber and the reflectance R of output mirror on the output laser parameters were experimentally analyzed. In the final pre-pumping experiment, a Q-switched pulse was achieved, with repetition frequency of 1 kHz, wavelength of 1 535 nm, single pulse energy of 40 μJ, pulse width of 5.09 ns, peak power of 7.89 kW and beam quality of 1.4. © 2018, Editorial Board of Journal of Infrared and Laser Engineering. All right reserved.

关键词:

Aluminum compounds Erbium compounds Glass Laser mirrors Magnesium compounds Microprocessor chips Optical pumping Pulse repetition rate Q switching Saturable absorbers Ytterbium compounds

作者机构:

  • [ 1 ] [Guo, Na]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China
  • [ 2 ] [Hui, Yongling]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China
  • [ 3 ] [Cai, Jinlu]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China
  • [ 4 ] [Jiang, Menghua]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China
  • [ 5 ] [Lei, Hong]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China
  • [ 6 ] [Li, Qiang]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China

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来源 :

Infrared and Laser Engineering

ISSN: 1007-2276

年份: 2018

期: 10

卷: 47

被引次数:

WoS核心集被引频次: 0

SCOPUS被引频次: 1

ESI高被引论文在榜: 0 展开所有

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