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作者:

Li, Yuan (Li, Yuan.) | Zhao, Yuanfu (Zhao, Yuanfu.) | Huang, Alex Q. (Huang, Alex Q..) | Zhang, Liqi (Zhang, Liqi.) | Lei, Yang (Lei, Yang.) | Yu, Ruiyang (Yu, Ruiyang.) | Ma, Qingxuan (Ma, Qingxuan.) | Huang, Qingyun (Huang, Qingyun.) | Sen, Soumik (Sen, Soumik.) | Jia, Yunpeng (Jia, Yunpeng.) | He, Yunlong (He, Yunlong.)

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EI Scopus SCIE

摘要:

Commercial enhancement-mode gallium nitride (GaN) HEMTs device is a superior candidate for high-frequency power electronics applications. However, GaN power devices have a unique dynamic RDS, ON problem which increases the conduction loss of the converter during operation. In this article, the temperature-dependent dynamic RDS, ON at high frequency is evaluated experimentally for the first time using the double-pulse test (DPT) and multiple-pulse test (MPT) techniques. Different temperature-dependent dynamic RDS, ON characteristics between the DPT and the MPT at high temperatures are investigated. The significance of the dynamic RDS,ON's temperature dependence is important since GaN devices are typically operating at elevated temperatures. The results suggest that the traditional waferlevel test method using one pulse or two pulses and the MPT without heating consideration or at lower pulse frequency may not be sufficient to evaluate the dynamic RDS, ON effect. Combined with high-frequency, high-voltage, and high-current stress, high operating temperatures result in severe RDS, ON degradation; hence, there is a diminished return on operating the devices at high temperatures.

关键词:

Dynamic R-DS,R-ON hard switching (HS) soft switching (SS) temperature gallium nitride (GaN) HEMTs frequency

作者机构:

  • [ 1 ] [Li, Yuan]Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China
  • [ 2 ] [Zhao, Yuanfu]Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China
  • [ 3 ] [Jia, Yunpeng]Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China
  • [ 4 ] [Huang, Alex Q.]Univ Texas Austin, Semicond Power Elect Ctr, Austin, TX 78712 USA
  • [ 5 ] [Zhang, Liqi]Univ Texas Austin, Semicond Power Elect Ctr, Austin, TX 78712 USA
  • [ 6 ] [Lei, Yang]Univ Texas Austin, Semicond Power Elect Ctr, Austin, TX 78712 USA
  • [ 7 ] [Yu, Ruiyang]Univ Texas Austin, Semicond Power Elect Ctr, Austin, TX 78712 USA
  • [ 8 ] [Ma, Qingxuan]Univ Texas Austin, Semicond Power Elect Ctr, Austin, TX 78712 USA
  • [ 9 ] [Huang, Qingyun]Univ Texas Austin, Semicond Power Elect Ctr, Austin, TX 78712 USA
  • [ 10 ] [Sen, Soumik]Univ Texas Austin, Semicond Power Elect Ctr, Austin, TX 78712 USA
  • [ 11 ] [He, Yunlong]Xidian Univ, Sch Microelect, Xian 710071, Peoples R China

通讯作者信息:

  • [Li, Yuan]Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China

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来源 :

IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS

ISSN: 2168-6777

年份: 2020

期: 1

卷: 8

页码: 111-123

5 . 5 0 0

JCR@2022

ESI学科: ENGINEERING;

ESI高被引阀值:115

被引次数:

WoS核心集被引频次: 19

SCOPUS被引频次: 23

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

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