High-voltage　enhancement-mode　(E-mode)　gallium　nitride　(GaN)　high　electron　mobility　transistor　(HEMT)　is　a　superior　candidate　to　enable　higher　efficiency　and　higher　power　density　when　compared　with　silicon　power　devices　in　power　converter　applications.　However,　the　dynamic　R-DS,R-ON　problem　affects　the　conduction　loss　of　the　converter　and　remains　one　of　the　major　issues　that　must　be　resolved.　In　this　study,　a　comprehensive　experimental　evaluation　and　analysis　method　of　the　temperature-dependent　dynamic　R-DS,R-ON　of　GaN　HEMT　in　a　circuit　level　is　proposed.　A　commercial　E-mode　GaN　HEMT　(GS66508T)　is　used　as　a　sample　to　study　the　temperature-dependent　dynamic　R-DS,R-ON　using　a　double-pulse-tester.　The　temperature-dependent　dynamic　R-DS,R-ON　under　different　DC-link　voltages　and　different　load　currents　are　studied　and　the　results　show　a　non-monotonic　temperature-dependence　of　the　dynamic　R-DS,R-ON.　It　is　concluded　that　the　temperature　dependence　of　the　buffer-induced　trapping　and　de-trapping　effect,　and　the　temperature　dependence　of　electron　mobility　together　influence　the　dynamic　R-DS,R-ON　of　E-mode　GaN　HEMT　device　during　operation.　This　finding　is　important　since　in　converter　applications　the　devices　are　typically　operating　at　elevated　temperatures.　The　proposed　comprehensive　experimental　method　can　be　used　to　estimate　and　analyse　the　dynamic　R-DS,R-ON　characteristics　of　other　GaN　devices.