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作者:

Li, Bao-Zhi (Li, Bao-Zhi.) | Zou, Yong-Gang (Zou, Yong-Gang.) | Wang, Xiao-Long (Wang, Xiao-Long.) | Pei, Li-Na (Pei, Li-Na.) | Shi, Lin-Lin (Shi, Lin-Lin.) | Li, Peng-Tao (Li, Peng-Tao.) | Guan, Bao-Lu (Guan, Bao-Lu.)

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EI Scopus PKU CSCD

摘要:

In order to increase the wavelength tuning range of the tunable laser and improve the reliability and stability of the system, a wavelength tunable vertical cavity surface emitting laser with a central wavelength of 852 nm was designed based on the characteristics of electrically controlled birefringence of liquid crystal. The physical principle that the structure obtained a wide range of wavelength tuning and single polarization stable output was analyzed, and the reflection spectra corresponding to the thickness of different liquid crystal layers under the whole device were further calculated by the transfer matrix method, the lasing wavelength of laser with different thickness and refractive index of liquid crystal was obtained. The results show that the tuning range of the liquid crystal tunable laser with single polarization reaches 31 nm and the tuning efficiency is more than 10 nm/V. © 2018, Science Press. All right reserved.

关键词:

Crystal structure Fiber optic sensors Laser pulses Lasers Laser theory Laser tuning Liquid crystals Liquid lasers Polarization Refractive index Semiconductor lasers Surface emitting lasers System stability Transfer matrix method

作者机构:

  • [ 1 ] [Li, Bao-Zhi]State Key Laboratory of High-power Semiconductor Lasers, Changchun University of Science and Technology, Changchun; 130022, China
  • [ 2 ] [Li, Bao-Zhi]Key Laboratory of Opto-electronics, Ministry of Education, Beijing University of Technology, Beijing; 100124, China
  • [ 3 ] [Zou, Yong-Gang]State Key Laboratory of High-power Semiconductor Lasers, Changchun University of Science and Technology, Changchun; 130022, China
  • [ 4 ] [Wang, Xiao-Long]State Key Laboratory of High-power Semiconductor Lasers, Changchun University of Science and Technology, Changchun; 130022, China
  • [ 5 ] [Pei, Li-Na]State Key Laboratory of High-power Semiconductor Lasers, Changchun University of Science and Technology, Changchun; 130022, China
  • [ 6 ] [Shi, Lin-Lin]State Key Laboratory of High-power Semiconductor Lasers, Changchun University of Science and Technology, Changchun; 130022, China
  • [ 7 ] [Li, Peng-Tao]Key Laboratory of Opto-electronics, Ministry of Education, Beijing University of Technology, Beijing; 100124, China
  • [ 8 ] [Guan, Bao-Lu]Key Laboratory of Opto-electronics, Ministry of Education, Beijing University of Technology, Beijing; 100124, China

通讯作者信息:

  • [shi, lin-lin]state key laboratory of high-power semiconductor lasers, changchun university of science and technology, changchun; 130022, china

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来源 :

Chinese Journal of Luminescence

ISSN: 1000-7032

年份: 2018

期: 11

卷: 39

页码: 1621-1626

被引次数:

WoS核心集被引频次: 0

SCOPUS被引频次: 2

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

近30日浏览量: 2

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