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作者:

Xie, Yi-Yang (Xie, Yi-Yang.) | Ni, Pei-Nan (Ni, Pei-Nan.) | Wang, Qiu-Hua (Wang, Qiu-Hua.) | Kan, Qiang (Kan, Qiang.) | Briere, Gauthier (Briere, Gauthier.) | Chen, Pei-Pei (Chen, Pei-Pei.) | Zhao, Zhuang-Zhuang (Zhao, Zhuang-Zhuang.) | Delga, Alexandre (Delga, Alexandre.) | Ren, Hao-Ran (Ren, Hao-Ran.) | Chen, Hong-Da (Chen, Hong-Da.) | Xu, Chen (Xu, Chen.) (学者:徐晨) | Genevet, Patrice (Genevet, Patrice.)

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摘要:

Vertical cavity surface-emitting lasers (VCSELs) have made indispensable contributions to the development of modern optoelectronic technologies. However, arbitrary beam shaping of VCSELs within a compact system has remained inaccessible until now. The emerging ultra-thin flat optical structures, namely metasurfaces, offer a powerful technique to manipulate electromagnetic fields with subwavelength spatial resolution. Here, we show that the monolithic integration of dielectric metasurfaces with VCSELs enables remarkable arbitrary control of the laser beam profiles, including self-collimation, Bessel and Vortex lasers, with high efficiency. Such wafer-level integration of metasurface through VCSEL-compatible technology simplifies the assembling process and preserves the high performance of the VCSELs. We envision that our approach can be implemented in various wide-field applications, such as optical fibre communications, laser printing, smartphones, optical sensing, face recognition, directional displays and ultra-compact light detection and ranging (LiDAR). Non-intrusive integration of metasurfaces with vertical cavity surface-emitting lasers enables fully arbitrary wavefront control for directional laser emission.

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作者机构:

  • [ 1 ] [Xie, Yi-Yang]Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ, Beijing, Peoples R China
  • [ 2 ] [Wang, Qiu-Hua]Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ, Beijing, Peoples R China
  • [ 3 ] [Zhao, Zhuang-Zhuang]Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ, Beijing, Peoples R China
  • [ 4 ] [Xu, Chen]Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ, Beijing, Peoples R China
  • [ 5 ] [Ni, Pei-Nan]Univ Cote Azur, CNRS, CRHEA, Valbonne, France
  • [ 6 ] [Briere, Gauthier]Univ Cote Azur, CNRS, CRHEA, Valbonne, France
  • [ 7 ] [Genevet, Patrice]Univ Cote Azur, CNRS, CRHEA, Valbonne, France
  • [ 8 ] [Kan, Qiang]Chinese Acad Sci, Inst Semicond, Beijing, Peoples R China
  • [ 9 ] [Chen, Hong-Da]Chinese Acad Sci, Inst Semicond, Beijing, Peoples R China
  • [ 10 ] [Chen, Pei-Pei]Natl Ctr Nanosci & Technol, Beijing, Peoples R China
  • [ 11 ] [Delga, Alexandre]III V Lab, Campus Polytech, Palaiseau, France
  • [ 12 ] [Ren, Hao-Ran]Ludwig Maximilians Univ Munchen, Fac Phys, Nanoinst Munich, Hybrid Nanosyst, Munich, Germany

通讯作者信息:

  • 徐晨

    [Xu, Chen]Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ, Beijing, Peoples R China;;[Genevet, Patrice]Univ Cote Azur, CNRS, CRHEA, Valbonne, France;;[Kan, Qiang]Chinese Acad Sci, Inst Semicond, Beijing, Peoples R China

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来源 :

NATURE NANOTECHNOLOGY

ISSN: 1748-3387

年份: 2020

期: 2

卷: 15

页码: 125-,

3 8 . 3 0 0

JCR@2022

ESI学科: MATERIALS SCIENCE;

ESI高被引阀值:169

被引次数:

WoS核心集被引频次: 12

SCOPUS被引频次: 243

ESI高被引论文在榜: 0 展开所有

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