As　a　typical　material　of　the　third-generation　semiconductor　with　wide　band　gap,　high　thermal　conductivity　and　high　critical　breakdown　electric　field,　silicon　carbide(SiC)　has　a　huge　potential　in　the　applications　of　photoelectric　devices　that　can　work　in　some　extreme　conditions,　such　as　in　a　high　temperature　or　intense　radiation　environment.　Here,　the　research　status　of　luminescence　properties　and　applications　of　SiC　was　summarized.　The　preparation　methods　and　characteristic　luminescence　of　monocrystal,　nanocrystalline　and　thin　film　of　SiC　were　presented.　Besides,　the　progress　and　prospect　of　SiC　luminescence　control　was　also　discussed　in　this　paper.　Utilizing　the　emerging　technologies,　we　will　be　able　to　modify　SiC＇s　properties　like　luminescence　spectrum　and　efficiency.　©　2017,　Journal　of　Materials　Engineering.　All　right　reserved.