A　novel　SiC　double-trench　MOSFET　(DT-MOS)　with　embedded　MOS-channel　diode　is　proposed　and　investigated　via　TCAD　simulations　in　this　article.　The　parasitic　body　diode　is　free　from　activation　when　the　device　serves　as　a　freewheeling　diode,　thus　completely　eliminating　the　bipolar　degradation.　Moreover,　the　proposed　MOSFET　features　superior　dynamic　characteristics.　The　gate　charge　and　gate-to-drain　charge　are　reduced　by　a　factor　of　3.9,　respectively,　when　compared　to　the　conventional　state-of-the-art　SiC　DT-MOS.　Combined　with　the　slightly　increased　ON-resistance　remarkably　improved　figures　of　merit　are　reduced　by　a　factor　of　3.7,　respectively　are　obtained　in　the　proposed　structure.　When　working　as　a　switching　device　under　200　kHz,　the　proposed　MOSFET　could　save　nearly　of　the　total　power　losses,　making　it　more　conductive　to　high-frequency　applications.　In　addition,　the　influence　of　parameters　variation　on　the　device　performance　is　discussed　as　well.