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Author:

Li, Xinyu (Li, Xinyu.) | Jia, Yunpeng (Jia, Yunpeng.) | Zhou, Xintian (Zhou, Xintian.) | Zhao, Yuanfu (Zhao, Yuanfu.) | Tang, Yun (Tang, Yun.) | Li, Yuan (Li, Yuan.) | Liu, Guanghai (Liu, Guanghai.) | Jia, Guo (Jia, Guo.)

Indexed by:

EI Scopus SCIE

Abstract:

The combined impact of single event effect (SEE) and total ion dose (TID) on Si-based radiation-hardened Vertical Double-diffused Metal-Oxide-Semiconductor (VDMOS) Field-Effect Transistor (VDMO-SFET) is investigated in this letter. As previous research of VDMOS on TID effect and SEE carried out separately, in fact, the combined impact could degrade the device performance more seriously, because of the greater numbers of oxide-trapped charges and interface states generated, which is more pronounced during multiple gamma irradiation and post-irradiation annealing. This phenomenon indicates that SEE is not only a transient effect, influencing whether the devices can be driven to failure, but also a potential threat to the long-term reliability of MOSFETs used in aerospace applications.

Keyword:

heavy ion radiation Radiation-hardened gamma ray irradiation cumulative effect

Author Community:

  • [ 1 ] [Li, Xinyu]Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China
  • [ 2 ] [Jia, Yunpeng]Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China
  • [ 3 ] [Zhou, Xintian]Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China
  • [ 4 ] [Tang, Yun]Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China
  • [ 5 ] [Li, Yuan]Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China
  • [ 6 ] [Zhao, Yuanfu]Beijing Microelect Technol Inst, Beijing, Peoples R China
  • [ 7 ] [Liu, Guanghai]Shenzhen Jihua Micro Special Elect Co Ltd, Shenzhen 51816, Peoples R China
  • [ 8 ] [Jia, Guo]Shenzhen Jihua Micro Special Elect Co Ltd, Shenzhen 51816, Peoples R China

Reprint Author's Address:

  • [Zhou, Xintian]Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China

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Source :

IEEE ELECTRON DEVICE LETTERS

ISSN: 0741-3106

Year: 2020

Issue: 2

Volume: 41

Page: 216-219

4 . 9 0 0

JCR@2022

ESI Discipline: ENGINEERING;

ESI HC Threshold:115

Cited Count:

WoS CC Cited Count: 20

SCOPUS Cited Count: 23

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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