Indexed by:
Abstract:
The combined impact of single event effect (SEE) and total ion dose (TID) on Si-based radiation-hardened Vertical Double-diffused Metal-Oxide-Semiconductor (VDMOS) Field-Effect Transistor (VDMO-SFET) is investigated in this letter. As previous research of VDMOS on TID effect and SEE carried out separately, in fact, the combined impact could degrade the device performance more seriously, because of the greater numbers of oxide-trapped charges and interface states generated, which is more pronounced during multiple gamma irradiation and post-irradiation annealing. This phenomenon indicates that SEE is not only a transient effect, influencing whether the devices can be driven to failure, but also a potential threat to the long-term reliability of MOSFETs used in aerospace applications.
Keyword:
Reprint Author's Address:
Email:
Source :
IEEE ELECTRON DEVICE LETTERS
ISSN: 0741-3106
Year: 2020
Issue: 2
Volume: 41
Page: 216-219
4 . 9 0 0
JCR@2022
ESI Discipline: ENGINEERING;
ESI HC Threshold:115
Cited Count:
WoS CC Cited Count: 20
SCOPUS Cited Count: 23
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 1
Affiliated Colleges: