852　nm　semiconductor　laser　was　manufactured　by　metal　organic　chemical　vapor　deposition　(MOCVD)　and　semiconductor　subsequent　technology.　The　threshold　current　of　this　laser　was　57.5　mA,　output　spectral　line　width　was　less　than　1　nm　at　room　temperature.　The　impact　of　temperature　on　output　optical　power,　threshold　current,　voltage,　output　centre　wavelength　was　analyzed.　When　the　temperature　changes　from　293　to　328　K,　the　characteristic　temperature　is　142.25　K,　and　the　rates　of　the　threshold　current　change　and　output　light　power　are　0.447　mA/K　and　0.63　mW/K,　respectively.　Ideal　factor　n　is　calculated　to　be　2.11,　while　the　laser　thermal　resistance　is　calculated　to　be　77.7　K/W.　The　calculated　center　wavelength　drift　rate　is　0.249　29　nm/K,　corresponding　well　to　the　measured　value　in　the　experiment.　Experimental　results　demonstrate　that　the　relevant　parameters　of　this　laser　are　stable　with　the　temperature　ranging　from　293　to　303　K.　However,　a　temperature　device　is　needed　if　a　higher　working　temperature　is　required.　©　2017,　Science　Press.　All　right　reserved.