As　a　wide　band　gap　semiconductor　device,　GaN　based　Schottky　barrier　diode　(SBD)　has　the　characteristics　of　high　voltage,　high　thermostability,　low　conduction　resistance　and　other　excellent　characteristics,　which　makes　it　widely　used　in　the　field　of　power　electronics.　This　paper　first　summarizes　the　problems　to　be　solved　in　the　development　of　SBD.　Then,　the　structure,　working　principle　and　structure　optimization　of　GaN　SBD　are　introduced.　Next,　the　structure,　working　principle　and　structure　optimization　of　AlGaN/GaN　SBD　are　summarized,　and　the　effects　of　these　structures　on　the　performance　of　AlGaN/GaN　SBDs　are　discussed　from　the　perspective　of　epitaxial　wafer　structure,　Schottky　electrode　structure　and　edge　termination　structure　of　AlGaN/GaN　SBD.　©　2017,　Science　Press.　All　right　reserved.