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作者:

Liu, Qiaoli (Liu, Qiaoli.) | Feng, Yajie (Feng, Yajie.) | Tian, Huijun (Tian, Huijun.) | He, Xiaoying (He, Xiaoying.) | Hu, Anqi (Hu, Anqi.) | Guo, Xia (Guo, Xia.)

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摘要:

Flexible light-emitting diodes (LEDs) are highly desired for wearable devices, flexible displays, robotics, biomedicine, etc. Traditionally, the transfer process of an ultrathin wafer of about 10-30 μm to a flexible substrate is utilized. However, the yield is low, and it is not applicable to thick GaN LED chips with a 100 μm sapphire substrate. In this paper, transferable LED chips utilized the mature LED manufacture technique are developed, which possesses the advantage of high yield. The flexible LED array demonstrates good electrical and optical performance. © 2020 Chinese Institute of Electronics.

关键词:

Substrates Semiconductor alloys Gallium nitride Flexible displays Sapphire III-V semiconductors Light emitting diodes

作者机构:

  • [ 1 ] [Liu, Qiaoli]School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing; 100876, China
  • [ 2 ] [Liu, Qiaoli]School of Information, Beijing University of Technology, Beijing; 100124, China
  • [ 3 ] [Feng, Yajie]School of Information, Beijing University of Technology, Beijing; 100124, China
  • [ 4 ] [Tian, Huijun]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China
  • [ 5 ] [He, Xiaoying]School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing; 100876, China
  • [ 6 ] [Hu, Anqi]School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing; 100876, China
  • [ 7 ] [Guo, Xia]School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing; 100876, China

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来源 :

Journal of Semiconductors

ISSN: 1674-4926

年份: 2020

期: 3

卷: 41

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