In　this　study,　we　have　grown　epitaxial　wurtzite　structured　InAs　nanosheets　using　Au　catalysts　on　a　GaAs{111}(B)　substrate　by　molecular　beam　epitaxy.　Through　detailed　electron　microscopy　characterization　studies　on　grown　nanosheets,　it　was　found　that　these　wurtzite　structured　InAs　nanosheets　grew　epitaxially　on　the　GaAs{111}(B)　substrate,　with　{0001}　catalyst/nanosheet　interfaces　and　extensive　{1120}　surfaces.　It　was　anticipated　that　the　epitaxially　grown　InAs　nanosheet　can　be　triggered　by　a　high　supersaturation　in　catalysts,　leading　to　an　inclined　growth　leaving　the　substrate　surface,　and　driven　by　the　small　lattice　mismatch　between　the　nanosheets　and　the　substrate,　with　the　orientation　relationship　of　(0001)(InAs)//(112)(GaAs).　This　study　provides　insights　into　achieving　epitaxial　free-standing　III-V　nanosheet　growth.