Resistive Switching Effect and Conduction Mechanism of BiFeO3 Thin Films - 文章详情页

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The　resistive　switching　behavior　of　BiFeO3　thin　film　prepared　via　pulsed　laser　deposition　was　investigated.　The　current-voltage　(I-V)　curves　were　measured　at　different　voltages.　The　resistance　changes　from　high　value　to　low　value　at　a　positive　voltage,　and　the　resistance　changes　from　low　value　to　high　value　at　a　negative　voltage.　The　space　charge　limited　conduction　mechanism　was　analyzed　through　the　fitting　of　the　I-V　curves.　The　resistive　effect　is　attributed　to　the　electric　filed　induced　carrier　trapping　and　detrapping,　which　results　in　the　variation　of　the　Schottky　barrier　height　at　the　interface　between　the　film　and　the　electrode.　©　2017,　Editorial　Department　of　Journal　of　the　Chinese　Ceramic　Society.　All　right　reserved.

关键词：

Bismuth compounds Curve fitting Iron compounds Pulsed laser deposition Schottky barrier diodes Thin films

作者机构：

[ 1 ] [Zhu, Hui]The College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing; 100124, China
[ 2 ] [Zhang, Yingqiao]The College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing; 100124, China
[ 3 ] [Wang, Pengfei]The College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing; 100124, China
[ 4 ] [Bai, Zilong]The College of Microelectronics, Fudan University, Shanghai; 200433, China
[ 5 ] [Meng, Xiao]The College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing; 100124, China
[ 6 ] [Chen, Yueyuan]The College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing; 100124, China
[ 7 ] [Qi, Qiong]National Engineering Research Center for Optoelectronics Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China

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