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摘要:
For the very narrow ridge waveguide width, the etching marks and etching methods in the manufacturing of the semiconductor tapered laser chip were studied in this paper. The double photolithography alignment mark using two different precisions for the ridge area and the tapered area was proposed to refine the alignment in the etching of ridge waveguide and tapered waveguide. The photolithography alignment marks were arranged in different place in different photolithography figure, and they interacted each other in order to keep the photolithography alignment marks clear and complete in repeated etching. By using this method, the etched chip delivers 4.026 W CW output at 7 A current with the center wavelength of 963 nm, and the slow and fast direction beam quality is 1.593 mm·mrad and 0.668 mm·mrad, respectively. © 2016, Science Press. All right reserved.
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来源 :
Chinese Journal of Luminescence
ISSN: 1000-7032
年份: 2016
期: 12
卷: 37
页码: 1502-1506