A　650-V　p-GaN　gate　HEMT　with　Schottky　source　extension　is　proposed　towards　enhanced　short-circuit　(SC)　reliability.　At　higher　drain　bias,　a　pinch-off　point　is　formed　at　the　edge　of　the　Schottky　source　extension,　resulting　in　reduced　saturation　current.　High-voltage　pulse　I-V　characterization　is　conducted　for　the　devices　in　the　ON-state　to　evaluate　their　SC　reliability.　With　the　similar　OFF-state　breakdown　voltages　(BVs),　the　proposed　device　survives　a　much　higher　SC　pulse　voltage　compared　to　the　conventional　p-GaN　gate　HEMT.　Then,　multiple　short-circuit　(SC)　stress/test　cycles　are　applied　to　the　devices.　For　each　stress,　the　drain　voltage　is　increased　by　50　V.　The　progressive　degradation　of　R-ON　and　OFF-state　leakage　cur-rent　are　recorded　after　each　SC　stress.　The　degradation　of　the　proposed　device　is　much　slower　than　the　conventional　device.　These　results　indicate　that　the　proposed　device　is　a　promising　solution　for　short-circuit　rugged　GaN　power　transistors