The　influence　of　surface　passivation　layers　on　silicon　hetero-junction　solar　cell　performance　was　studied　in　this　paper,　mainly　in　three　aspects:　1)The　comparison　of　surface　passivation　characteristics　between　a-SiOx:H(i)layer　and　a-Si:H(i)layer;2)The　thickness　effect　of　intrinsic　amorphous　silicon　layers(a-Si:H(i))on　solar　cell　performance;　3)The　influence　of　a-Si:H(i)films　prepared　by　different　deposition　rates　on　the　passivation　effect　and　I-V　performance　of　SHJ　cells,　and　characterization　of　H　concentration　using　FTIR　measurement.　The　conversion　efficiency　of　20.90%　is　obtained　on　SHJ　cells　using　n-type　c-Si　wafer　with　thickness　of　200　μm　and　area　of　156　mm×156　mm.　©　2016,　Editorial　Board　of　Acta　Energiae　Solaris　Sinica.　All　right　reserved.