In　order　to　solve　the　problem　of　size　and　power　consumption　of　wired　winding　or　wireless　built-in　power　supply　devices　in　optogenetic　experiments,　an　implantable　wireless　powered　optoelectronic　integrated　chip,　with　a　RF-DC　rectifier　and　a　GaN-LED　optrode,　has　been　designed.　The　rectifier　is　realized　with　the　integrated　NMOS　and　capacitor　based　on　SMIC　0.18um　CMOS　technology.　The　collected　RF　signal　is　converted　to　a　stable　and　high-amplitude　DC　signal　by　quadruple　voltage　rectification,　and　then　supplied　to　the　GaN-LED　optrode　as　its　driver.　Therefore,　the　proposed　implantable　wirelessly　powered　optoelectronic　integrated　chip　does　not　require　external　wiring　or　built-in　battery,　which　can　effectively　reduce　the　size　and　power　consumption.　The　results　from　the　post-simulation　shows　that　when　the　antenna　collects　5dBm　RF　signal　of　1.5GHz,　the　RF-DC　rectifier　provides　about　3.4V　DC　stable　signal　with　about　20us　delay　and　can　make　the　GaN-LED　optrode　working　normally.　The　PVT　and　Monte　Carlo　simulation　show　the　circuit　stability　under　process　and　temperature　deviations,　which　can　meet　the　requirements　of　optrode　load.　©　2023　IEEE.