By　using　one-dimensional　ZnO　nanowires　and　two-dimensional　graphene　composite　structure　to　integrate　onto　p-GaN　surface,　the　current　expansion　and　the　efficiency　improvement　of　LED　light　extraction　were　both　achieved.　Comparing　the　devices　with　or　without　ZnO　nanowires,　it　was　found　that　ZnO　nanowires　could　increase　the　light　extraction　efficiency　of　GaN　LED　by　30%.　The　key　parameters,　such　as　opening　voltage,　working　voltage　and　reverse　leakage　current　of　the　two　type　of　devices　were　analyzed,　and　the　results　verified　that　the　structure　used　in　GaN　LED　didn＇t　deteriorate　the　electrical　properties　of　LED.　The　complex　structure　adopted　in　this　paper　for　GaN　LED　can　not　only　achieve　a　good　Ohmic　contact　without　the　using　of　ITO,　but　also　enhance　the　extraction　of　light.　©　2016,　Science　Press.　All　right　reserved.