In　this　paper,　the　SiC　planar　MOSFET　with　built-in　reverse　MOS-channel　diode　(SiC　MCD-MOSFET)　is　investigated　utilizing　TCAD　simulation　tools.　When　the　device　is　working　as　a　freewheeling　diode,　the　operation　of　the　parasitic　body　diode　is　suppressed　effectively　due　to　the　lower　threshold　voltage　of　the　MCD.　Therefore,　the　bipolar　degradation　issue　can　be　completely　solved.　In　addition,　the　SiC　MCD-MOSFET　is　featuring　superior　dynamic　characteristics.　The　input　capacitance　(CISS),　reverse　transfer　capacitance　(CRSS),　gate　charge　(QG)　and　gate-to-drain　charge　(QGD)　are　reduced　by　a　factor　of　similar　to　2,　similar　to　7,　similar　to　2　and　similar　to　10,　respectively,　as　compared　to　the　conventional　SiC　MOSFET　(SiC　C-MOSFET).　Combined　with　the　slightly　increased　on-resistance　(RON),　tremendously　enhanced　figures　of　merit　(R-ON　x　Q(G)　and　R-ON　x　Q(GD)　are　decreased　by　a　factor　of　1.8　and　9,　respectively)　are　obtained　in　the　SiC　MCD-MOSFET.　The　outstanding　performance　and　easy-to-implement　feature　make　the　SiC　MCD-MOSFET　more　attractive　for　further　power　electronic　applications.