Based　on　the　＇cold　processing＇　property　of　picosecond　laser,　the　investigation　on　the　hybrid　technique　using　picosecond　laser　irradiation　followed　by　short-time　chemical　corrosion　(NaOH　solution,　mass　fraction:　4%,　lass　than　3　min,　water　bath:　80)　to　fabricate　high　performance　silicon　antireflection　textures　is　carried　out.　Over　a　broad　wavelength　range　of　400~1000　nm,　the　average　reflectance　of　the　two　fabricated　novel　surface　textures,　which　are　the　micro-nano　hierarchical　structure　texture　and　the　dome-cone　array　texture,　both　reduce　to　below　10%.　Even　the　average　reflection　of　the　former　reduces　to　below　5%.　The　fabrication　can　be　carried　out　with　high　controllability　and　without　using　the　etch　mask　and　vacuum　circumstance.　The　mechanism　of　different　regulation　matching　of　the　laser　process　parameters　and　chemical　corrosion　parameters　acting　on　the　formation　of　the　novel　antireflection　textures　is　studied.　The　antireflection　mechanism　of　the　textures　is　also　analyzed.　Results　provide　an　important　guide　for　laser　fabrication　of　high　performance　silicon　antireflection　textures　for　the　application　in　solar　cells　and　other　semiconductor　devices　in　a　low-cost　and　controllable　way.　©,　2015,　Science　Press.　All　right　reserved.