Q-switched Yb:KGW laser based on topological insulators - 文章详情页

作者：

Liu, Jinghui (Liu, Jinghui.) | Tian, Jinrong (Tian, Jinrong.) | Hu, Mengting (Hu, Mengting.) | Dou, Zhiyuan (Dou, Zhiyuan.) | Song, Yanrong (Song, Yanrong.) (学者：宋晏蓉)

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摘要：

Yb:KGW　laser　material　is　well　suited　to　build　diode-pumped　pulse　lasers　in　watt　region　because　of　its　broad　gain　bandwidth　of　24　nm,　large　emission　cross　section　of　2.8×10-20　cm2　and　good　thermal　conductivity　of　3.3　W/(m·K).　A　passively　Q-switched　Yb:KGW　laser　is　obtained　using　a　transmission-type　topological　insulator　Bi2Se3　as　a　saturable　absorber.　The　achieved　maximum　pulse　energy　is　4.7　mJ　and　the　peak　power　is　3.13　W　for　a　pulse　duration　of　1.5　ms.　©,　2015,　Science　Press.　All　right　reserved.

关键词：

Topological insulators Electric insulators Bismuth compounds Lasers Q switching Selenium compounds Saturable absorbers Optical pumping

作者机构：

[ 1 ] [Liu, Jinghui]College of Applied Sciences, Beijing University of Technology, Beijing; 100124, China
[ 2 ] [Tian, Jinrong]College of Applied Sciences, Beijing University of Technology, Beijing; 100124, China
[ 3 ] [Hu, Mengting]College of Applied Sciences, Beijing University of Technology, Beijing; 100124, China
[ 4 ] [Dou, Zhiyuan]College of Applied Sciences, Beijing University of Technology, Beijing; 100124, China
[ 5 ] [Song, Yanrong]College of Applied Sciences, Beijing University of Technology, Beijing; 100124, China

通讯作者信息：

[tian, jinrong]college of applied sciences, beijing university of technology, beijing; 100124, china

电子邮件地址：

jrtian@bjut.edu.cn

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