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作者:

Eggli, Rafael S. (Eggli, Rafael S..) | Svab, Simon (Svab, Simon.) | Patlatiuk, Taras (Patlatiuk, Taras.) | Trüssel, Dominique A. (Trüssel, Dominique A..) | Carballido, Miguel J. (Carballido, Miguel J..) | Chevalier Kwon, Pierre (Chevalier Kwon, Pierre.) | Geyer, Simon (Geyer, Simon.) | Li, Ang (Li, Ang.) | Bakkers, Erik P.A.M. (Bakkers, Erik P.A.M..) | Kuhlmann, Andreas V. (Kuhlmann, Andreas V..) | Zumbühl, Dominik M. (Zumbühl, Dominik M..)

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摘要:

Radio-frequency reflectometry techniques enable high-bandwidth readout of semiconductor quantum dots. Careful impedance matching of the resonant circuit is required to achieve high sensitivity, which, however, proves challenging at cryogenic temperatures. Gallium arsenide-based voltage-tunable capacitors, so-called varactor diodes, can be used for in situ tuning of the circuit impedance but deteriorate and fail at temperatures below 10 K and in magnetic fields. Here, we investigate a varactor based on strontium titanate with a hyperabrupt capacitance-voltage characteristic, i.e., a capacitance tunability similar to the best gallium arsenide-based devices. The varactor design introduced here is compact, scalable, and easy to wire bond, with an accessible capacitance range from 45 pF to 3.2 pF. We tune a resonant inductor-capacitor circuit to perfect impedance matching and observe robust temperature- and field-independent matching down to 11 mK and up to 2 T in-plane field. Finally, we perform gate-dispersive charge sensing on a germanium-silicon core-shell nanowire hole double quantum dot, paving the way toward gate-based single-shot spin readout. Our results bring small magnetic field-resilient highly tunable varactors to mK temperatures, expanding the toolbox of cryo-radio-frequency applications. © 2023 American Physical Society.

关键词:

Cryogenics Capacitance Magnetic fields Resonant circuits Electric resistance Varactors Impedance matching (electric) Strontium titanates Nanocrystals Relaxation time Reflection Radio waves Natural frequencies Semiconductor quantum dots Gallium arsenide III-V semiconductors

作者机构:

  • [ 1 ] [Eggli, Rafael S.]Department of Physics, University of Basel, Klingelbergstrasse 82, Basel; CH-4056, Switzerland
  • [ 2 ] [Svab, Simon]Department of Physics, University of Basel, Klingelbergstrasse 82, Basel; CH-4056, Switzerland
  • [ 3 ] [Patlatiuk, Taras]Department of Physics, University of Basel, Klingelbergstrasse 82, Basel; CH-4056, Switzerland
  • [ 4 ] [Trüssel, Dominique A.]Department of Physics, University of Basel, Klingelbergstrasse 82, Basel; CH-4056, Switzerland
  • [ 5 ] [Carballido, Miguel J.]Department of Physics, University of Basel, Klingelbergstrasse 82, Basel; CH-4056, Switzerland
  • [ 6 ] [Chevalier Kwon, Pierre]Department of Physics, University of Basel, Klingelbergstrasse 82, Basel; CH-4056, Switzerland
  • [ 7 ] [Geyer, Simon]Department of Physics, University of Basel, Klingelbergstrasse 82, Basel; CH-4056, Switzerland
  • [ 8 ] [Li, Ang]Department of Applied Physics, TU Eindhoven, Den Dolech 2, Eindhoven; 5612 AZ, Netherlands
  • [ 9 ] [Li, Ang]Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing; 100124, China
  • [ 10 ] [Bakkers, Erik P.A.M.]Department of Applied Physics, TU Eindhoven, Den Dolech 2, Eindhoven; 5612 AZ, Netherlands
  • [ 11 ] [Kuhlmann, Andreas V.]Department of Physics, University of Basel, Klingelbergstrasse 82, Basel; CH-4056, Switzerland
  • [ 12 ] [Zumbühl, Dominik M.]Department of Physics, University of Basel, Klingelbergstrasse 82, Basel; CH-4056, Switzerland

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来源 :

Physical Review Applied

年份: 2023

期: 5

卷: 20

4 . 6 0 0

JCR@2022

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SCOPUS被引频次: 2

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