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摘要:
Compared with BVCEO, BVCES is more related to collector optimization and more practical significance, so that BVCES × fT rather than BVCEO × fT is employed in representing the limit of the product of the breakdown voltage-cutoff frequency in SiGe HBT for collector engineering design. Instead of a single decrease in collector doping to improve BVCES × fT and BVCEO × fT, a novel thin composite of N- and P+ doping layers inside the CB SCR is presented to improve the well-known tradeoff between the breakdown voltage and cut-off frequency in SiGe HBT, and BVCES and BVCEO are improved respectively with slight degradation in fT. As a result, the BVCES × fT product is improved from 537.57 to 556.4 GHz•V, and the BVCEO × fT product is improved from 309.51 to 326.35 GHz•V. © 2015 Chinese Institute of Electronics.
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来源 :
Journal of Semiconductors
ISSN: 1674-4926
年份: 2015
期: 4
卷: 36
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