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作者:

Fu, Qiang (Fu, Qiang.) | Zhang, Wanrong (Zhang, Wanrong.) | Jin, Dongyue (Jin, Dongyue.) | Zhao, Yanxiao (Zhao, Yanxiao.) | Zhang, Lianghao (Zhang, Lianghao.)

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EI Scopus CSCD

摘要:

Compared with BVCEO, BVCES is more related to collector optimization and more practical significance, so that BVCES × fT rather than BVCEO × fT is employed in representing the limit of the product of the breakdown voltage-cutoff frequency in SiGe HBT for collector engineering design. Instead of a single decrease in collector doping to improve BVCES × fT and BVCEO × fT, a novel thin composite of N- and P+ doping layers inside the CB SCR is presented to improve the well-known tradeoff between the breakdown voltage and cut-off frequency in SiGe HBT, and BVCES and BVCEO are improved respectively with slight degradation in fT. As a result, the BVCES × fT product is improved from 537.57 to 556.4 GHz•V, and the BVCEO × fT product is improved from 309.51 to 326.35 GHz•V. © 2015 Chinese Institute of Electronics.

关键词:

Cutoff frequency Electric breakdown Heterojunction bipolar transistors Product design Silicon alloys

作者机构:

  • [ 1 ] [Fu, Qiang]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China
  • [ 2 ] [Fu, Qiang]College of Physics, Liaoning University, Shenyang, China
  • [ 3 ] [Zhang, Wanrong]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China
  • [ 4 ] [Jin, Dongyue]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China
  • [ 5 ] [Zhao, Yanxiao]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China
  • [ 6 ] [Zhang, Lianghao]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China

通讯作者信息:

  • [fu, qiang]college of physics, liaoning university, shenyang, china;;[fu, qiang]college of electronic information and control engineering, beijing university of technology, beijing, china

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来源 :

Journal of Semiconductors

ISSN: 1674-4926

年份: 2015

期: 4

卷: 36

被引次数:

WoS核心集被引频次: 0

SCOPUS被引频次: 1

ESI高被引论文在榜: 0 展开所有

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