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作者:

Yu, Ning (Yu, Ning.) | Wang, Hong-Hang (Wang, Hong-Hang.) | Liu, Fei-Fei (Liu, Fei-Fei.) | Du, Zhi-Juan (Du, Zhi-Juan.) | Wang, Yue-Hua (Wang, Yue-Hua.) | Song, Hui-Hui (Song, Hui-Hui.) | Zhu, Yan-Xu (Zhu, Yan-Xu.) | Sun, Jie (Sun, Jie.)

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摘要:

GaN high electron mobility transistor (HEMT) has been widely acknowledged for use in high-frequency, high-power, and high-temperature applications because of their features such as its wide band gap, high electron saturation velocity, high 2-DEG density at the hetero-interface, high breakdown voltage (BV), and high thermal conductivity. The issues that limit the gallium nitride high electron mobility transistor device performance improvement and some solutions are introduced firstly. And then, the latest research progress on the high-frequency, high-power area of gallium nitride high electron mobility transistor is reviewed in detail with focus on the material structural design and the device structural design. Finally, the direction for the development of the device is discussed briefly. ©, 2015, Chines Academy of Sciences. All right reserved.

关键词:

Electron mobility Electrons Energy gap Gallium nitride High electron mobility transistors High temperature applications III-V semiconductors Nitrides Structural design Thermal conductivity Transistors Wide band gap semiconductors

作者机构:

  • [ 1 ] [Yu, Ning]Beijing Optoelectronic Technology Laboratory, College of Electronic Information & Control Engineering, Beijing University of Technology, Beijing; 100124, China
  • [ 2 ] [Wang, Hong-Hang]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan; 528402, China
  • [ 3 ] [Liu, Fei-Fei]Beijing Optoelectronic Technology Laboratory, College of Electronic Information & Control Engineering, Beijing University of Technology, Beijing; 100124, China
  • [ 4 ] [Du, Zhi-Juan]Beijing Optoelectronic Technology Laboratory, College of Electronic Information & Control Engineering, Beijing University of Technology, Beijing; 100124, China
  • [ 5 ] [Wang, Yue-Hua]Beijing Optoelectronic Technology Laboratory, College of Electronic Information & Control Engineering, Beijing University of Technology, Beijing; 100124, China
  • [ 6 ] [Song, Hui-Hui]Beijing Optoelectronic Technology Laboratory, College of Electronic Information & Control Engineering, Beijing University of Technology, Beijing; 100124, China
  • [ 7 ] [Zhu, Yan-Xu]Beijing Optoelectronic Technology Laboratory, College of Electronic Information & Control Engineering, Beijing University of Technology, Beijing; 100124, China
  • [ 8 ] [Sun, Jie]Beijing Optoelectronic Technology Laboratory, College of Electronic Information & Control Engineering, Beijing University of Technology, Beijing; 100124, China

通讯作者信息:

  • [zhu, yan-xu]beijing optoelectronic technology laboratory, college of electronic information & control engineering, beijing university of technology, beijing; 100124, china

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来源 :

Chinese Journal of Luminescence

ISSN: 1000-7032

年份: 2015

期: 10

卷: 36

页码: 1178-1187

被引次数:

WoS核心集被引频次: 0

SCOPUS被引频次: 6

ESI高被引论文在榜: 0 展开所有

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