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作者:

Gao, Mang-Mang (Gao, Mang-Mang.) | Xue, Zi-Wen (Xue, Zi-Wen.) | Li, Jin (Li, Jin.) | Dong, Fa-Yun (Dong, Fa-Yun.) | Liang, Sen (Liang, Sen.) | Li, Hai-Bo (Li, Hai-Bo.) | Wang, Li (Wang, Li.)

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EI Scopus PKU CSCD

摘要:

The heater configuration and the convective behavior of silicon melt in the vacuum induction melting furnace used for preparing solar-grade casting quasi-single crystal silicon was analyzed by the commercial CG-Sim software. The results show that the electromagnetic force is one of the driving forces to convection. Meanwhile, both strength and distribution of the electromagnetic force are influenced strongly by the ratio of induction coil height to melt depth (defined to k). As k value is 1.2, melt convection develops from two vortexes to one dominating vortex, which is benefit to the impurities evaporation. At the same time, for the inductive frequency within the range from 3000 Hz to 5000 Hz, the flow strength decreases which can increase the thickness of boundary layer between silicon melt and silica crucible, resulting in the deceasing of oxygen concentration in silicon melt. ©, 2015, Chinese Ceramic Society. All right reserved.

关键词:

Melting furnaces Single crystals Vacuum furnaces Crystal impurities Silicon Vacuum applications Melting Vortex flow Silicon wafers Boundary layers

作者机构:

  • [ 1 ] [Gao, Mang-Mang]College of Applied Sciences, Beijing University of Technology, Beijing, China
  • [ 2 ] [Gao, Mang-Mang]Key Laboratory of Photovoltaic Materials for Ningxia, Ningxia University, Yinchuan, China
  • [ 3 ] [Xue, Zi-Wen]Key Laboratory of Photovoltaic Materials for Ningxia, Ningxia University, Yinchuan, China
  • [ 4 ] [Li, Jin]Key Laboratory of Photovoltaic Materials for Ningxia, Ningxia University, Yinchuan, China
  • [ 5 ] [Dong, Fa-Yun]Key Laboratory of Photovoltaic Materials for Ningxia, Ningxia University, Yinchuan, China
  • [ 6 ] [Liang, Sen]Key Laboratory of Photovoltaic Materials for Ningxia, Ningxia University, Yinchuan, China
  • [ 7 ] [Li, Hai-Bo]Key Laboratory of Photovoltaic Materials for Ningxia, Ningxia University, Yinchuan, China
  • [ 8 ] [Wang, Li]College of Applied Sciences, Beijing University of Technology, Beijing, China

通讯作者信息:

  • [li, jin]key laboratory of photovoltaic materials for ningxia, ningxia university, yinchuan, china

电子邮件地址:

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来源 :

Journal of Synthetic Crystals

ISSN: 1000-985X

年份: 2015

期: 7

卷: 44

页码: 1941-1945

被引次数:

WoS核心集被引频次: 0

SCOPUS被引频次:

ESI高被引论文在榜: 0 展开所有

万方被引频次:

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