Recently,　much　attention　has　been　received　by　ion　beam　assisted　deposition　(IBAD)　technology　for　the　preparation　of　second-generation　high　temperature　coated　conductors.　Surface　roughness　(Ra)　for　substrate　material　fabricated　via　IBAD　route　is　required　as　less　than　2　nm　(5　mu　m　x　5　mu　m).　The　aim　of　this　current　study　is　to　reduce　Ra　as　less　than　2　nm,　which　is　20　nm　for　original　tapes.　Solution　deposition　planarization　(SDP)　technique　was　utilized　in　order　to　further　improve　the　surface　quality　of　polished　Hastelloy　C-276　alloy,　for　which　maximum　Ra　value　is　usually　greater　than　5nm.　The　processing　parameters　and　precursors,　influencing　Ra,　crystallinity,　morphology　and　film　thickness　were　systematically　investigated.　Precursor　solutions　with　different　concentration　were　prepared　by　utilizing　yttrium　acetate　as　solute,　ethanol　as　solvent,　di-ethanolamine　and　ethylene　triamine　as　additives.　The　average　Ra　＜　2　nm　and　maximum　Ra-(max)　＜　5　nm　(5　mu　m　x　5　mu　m)　was　obtained　after　the　heat　treatment　at　530　degrees　C.　The　obtained　results　suggested　SDP　technique　as　an　effective　way　to　resolve　the　problem　of　surface　roughness.