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Author:

Zhang, Hongqiang (Zhang, Hongqiang.) | He, Siliang (He, Siliang.) | Qu, Guanda (Qu, Guanda.) | Deng, Zhongyang (Deng, Zhongyang.) | Zou, Guisheng (Zou, Guisheng.) | Jia, Qiang (Jia, Qiang.) | Deng, Erping (Deng, Erping.) | Guo, Wei (Guo, Wei.)

Indexed by:

EI Scopus SCIE

Abstract:

Ag nanopaste is one of the most promising die-attach materials in power devices. In this work, robust sintered SiC devices are achieved by using graphene reinforced Ag nanopaste to improve the heat dissipation and shear strength. Microstructure, mechanical, and electrical properties of the sintered joints are investigated. The addition graphene can bring exciting performance improvements, and graphene (<0.25 wt%) is found to be enough to bridge voids among Ag particles. The decomposition temperature of nanopaste exhibits an increasing trend with the increase of graphene content. The sintered layer forms metallurgical interfaces between chip and substrate, while excellent metallurgical combination ensures the mechanical, electrical, and thermal properties of die attachments. The joint strength is significantly improved after adding graphene compared with pristine Ag nanopaste, especially when sintered at a lower temperature of 230 degrees C, the joint strength is increased by 3 similar to 4 times. Good interconnection can be achieved at a sintering temperature of 190 degrees C. Low temperature interconnection, fast sintering (sintering time: >= 1 min), and lower thermal resistance and junction temperature will provide an effective way to enhance the quality of the sintered Ag joints, which is promising for the attachment of power devices in new energy vehicles.

Keyword:

silicon carbide (SiC) Ag sintering nanopaste reliability

Author Community:

  • [ 1 ] [Zhang, Hongqiang]Beihang Univ, Sch Mech Engn & Automat, Beijing 100191, Peoples R China
  • [ 2 ] [Qu, Guanda]Beihang Univ, Sch Mech Engn & Automat, Beijing 100191, Peoples R China
  • [ 3 ] [Guo, Wei]Beihang Univ, Sch Mech Engn & Automat, Beijing 100191, Peoples R China
  • [ 4 ] [He, Siliang]Guilin Univ Elect Technol, Sch Mech & Elect Engn, Guangxi Key Lab Mfg Syst & Adv Mfg Technol, Guilin 541004, Peoples R China
  • [ 5 ] [Deng, Zhongyang]Tsinghua Univ, Dept Mech Engn, Beijing 100084, Peoples R China
  • [ 6 ] [Zou, Guisheng]Tsinghua Univ, Dept Mech Engn, Beijing 100084, Peoples R China
  • [ 7 ] [Jia, Qiang]Beijing Univ Technol, Fac Mat & Mfg, Beijing 100124, Peoples R China
  • [ 8 ] [Deng, Erping]North China Elect Power Univ, State Key Lab Alternate Elect Power Syst Renewable, Beijing 102206, Peoples R China

Reprint Author's Address:

  • [He, Siliang]Guilin Univ Elect Technol, Sch Mech & Elect Engn, Guangxi Key Lab Mfg Syst & Adv Mfg Technol, Guilin 541004, Peoples R China;;[Jia, Qiang]Beijing Univ Technol, Fac Mat & Mfg, Beijing 100124, Peoples R China;;[Deng, Erping]North China Elect Power Univ, State Key Lab Alternate Elect Power Syst Renewable, Beijing 102206, Peoples R China;;

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Source :

IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY

ISSN: 2156-3950

Year: 2024

Issue: 1

Volume: 14

Page: 52-60

2 . 2 0 0

JCR@2022

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 16

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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