As　a　very　promising　epitaxy　technology,　the　remote　epitaxy　has　attracted　extensive　attention　in　recent　years,　in　which　graphene　is　the　most　used　interlayer　material.　As　an　isomorphic　of　graphene,　two-dimensional　(2D)　hexagonal　boron　nitride　(h-BN),　is　another　promising　interlayer　for　the　remote　epitaxy.　However,　there　is　a　current　debate　on　the　feasibility　of　using　h-BN　as　interlayer　in　the　remote　epitaxy.　Herein,　we　demonstrate　that　the　potential　field　of　sapphire　can　completely　penetrate　monolayer　h-BN,　and　hence　the　remote　epitaxy　of　ZrS2　layers　can　be　realized　on　sapphire　substrates　through　monolayer　h-BN.　The　field　of　sapphire　can　only　partially　penetrate　the　bilayer　h-BN　and　result　in　the　mixing　of　remote　epitaxy　and　van　der　Waals　(vdWs)　epitaxy.　Due　to　the　weak　interfacial　scattering　and　high　crystalline　quality　of　ZrS2　epilayer,　the　ZrS2　photodetector　with　monolayer　h-BN　shows　the　best　performance,　with　an　on/off　ratio　of　more　than　2　x　10(5)　and　a　responsivity　up　to　379　mA.W-1.　This　work　provides　an　efficient　approach　to　prepare　single-crystal　transition　metal　dichalcogenides　and　their　heterojunctions　with　h-BN,　which　have　great　potential　in　developing　large-area　2D　electronic　devices.