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Author:

Hu, Shunhua (Hu, Shunhua.) | Qin, Yang (Qin, Yang.) | Lu, Shuhang (Lu, Shuhang.) | Guo, Lidan (Guo, Lidan.) | Gu, Xianrong (Gu, Xianrong.) | Yang, Tingting (Yang, Tingting.) | Zhang, Rui (Zhang, Rui.) | Meng, Ke (Meng, Ke.) | Zhang, Cheng (Zhang, Cheng.) | Wu, Meng (Wu, Meng.) | Sun, Xiangnan (Sun, Xiangnan.)

Indexed by:

EI Scopus SCIE

Abstract:

Molecular semiconductors (MSCs) are known as ideal candidates for constructing room-temperature spin-charge interactive devices due to their long spin lifetimes and abundant photoelectric properties. These devices can achieve novel and valuable functionalities such as room-temperature supply units of fully spin-polarized current. Unfortunately, their performances (sub-0.1 nA) remain unsatisfactory due to limited charge and spin injection efficiency, which can hardly be improved despite great efforts thus far. Herein, from the theoretical side, an interfacial tunnel layer with precisely-controlled barrier in spintronic devices may simultaneously enhance spin and charge injection. Accordingly, a solution-processed small molecule with smooth morphology and amorphous structure is introduced to form a uniform and well-controllable barrier in molecular spin-photovoltaic devices. By modulating the thickness to effectively control the barrier, both spin and charge injection efficiency increase by > 150%. Thus, the spin-charge interactive functionalities as supply units of fully spin-polarized current have also been significantly improved than the current record at room temperature, the output fully spin-polarized current (>2 nA) is 1200%-larger, and the output power increases by > 50 times. Moreover, the interface-modified spintronic devices exhibit excellent stability even after 70 days of exposure to air, which is essential for practical applications in the future.

Keyword:

molecular spintronics spin-charge interactive functionality spin and charge injection interface engineering air stability

Author Community:

  • [ 1 ] [Hu, Shunhua]Natl Ctr Nanosci & Technol, Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China
  • [ 2 ] [Qin, Yang]Natl Ctr Nanosci & Technol, Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China
  • [ 3 ] [Guo, Lidan]Natl Ctr Nanosci & Technol, Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China
  • [ 4 ] [Gu, Xianrong]Natl Ctr Nanosci & Technol, Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China
  • [ 5 ] [Yang, Tingting]Natl Ctr Nanosci & Technol, Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China
  • [ 6 ] [Zhang, Rui]Natl Ctr Nanosci & Technol, Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China
  • [ 7 ] [Meng, Ke]Natl Ctr Nanosci & Technol, Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China
  • [ 8 ] [Zhang, Cheng]Natl Ctr Nanosci & Technol, Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China
  • [ 9 ] [Wu, Meng]Natl Ctr Nanosci & Technol, Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China
  • [ 10 ] [Sun, Xiangnan]Natl Ctr Nanosci & Technol, Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China
  • [ 11 ] [Hu, Shunhua]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 12 ] [Yang, Tingting]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 13 ] [Meng, Ke]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 14 ] [Sun, Xiangnan]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 15 ] [Lu, Shuhang]Zhengzhou Univ, Sch Mat Sci & Engn, Zhengzhou 450001, Peoples R China
  • [ 16 ] [Sun, Xiangnan]Zhengzhou Univ, Sch Mat Sci & Engn, Zhengzhou 450001, Peoples R China
  • [ 17 ] [Zhang, Rui]Beijing Univ Technol, Fac Mat & Mfg, Beijing Key Lab Microstruct & Property Solids, Beijing 100124, Peoples R China

Reprint Author's Address:

  • [Qin, Yang]Natl Ctr Nanosci & Technol, Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China;;[Sun, Xiangnan]Natl Ctr Nanosci & Technol, Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China;;[Sun, Xiangnan]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China;;[Sun, Xiangnan]Zhengzhou Univ, Sch Mat Sci & Engn, Zhengzhou 450001, Peoples R China

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Source :

ADVANCED FUNCTIONAL MATERIALS

ISSN: 1616-301X

Year: 2024

Issue: 23

Volume: 34

1 9 . 0 0 0

JCR@2022

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 2

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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