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Author:

Chen, Yujie (Chen, Yujie.) | Fang, Yan (Fang, Yan.) | Cheng, Pengming (Cheng, Pengming.) | Ke, Xiaoxing (Ke, Xiaoxing.) | Zhang, Manchen (Zhang, Manchen.) | Zou, Jiawei (Zou, Jiawei.) | Ding, Jun (Ding, Jun.) | Zhang, Bozhao (Zhang, Bozhao.) | Gu, Lin (Gu, Lin.) | Zhang, Qinghua (Zhang, Qinghua.) | Liu, Gang (Liu, Gang.) | Yu, Qian (Yu, Qian.)

Indexed by:

Scopus SCIE

Abstract:

Molybdenum and its alloys are known for their superior strength among body-centered cubic materials. However, their widespread application is hindered by a significant decrease in ductility at lower temperatures. In this study, we demonstrate the achievement of exceptional ductility in a Mo alloy containing rare-earth La2O3 nanoparticles through rotary-swaging, a rarity in Mo-based materials. Our analysis reveals that the large ductility originates from substantial variations in the electronic density of states, a characteristic intrinsic to rare-earth elements. This characteristic can accelerate the generation of oxygen vacancies, facilitating the amorphization of the oxide-matrix interface. This process promotes vacancy absorption and modification of dislocation configurations. Furthermore, by inducing irregular shapes in the La2O3 nanoparticles through rotary-swaging, incoming dislocations interact with them, creating multiple dislocation sources near the interface. These dislocation sources act as potent initiators at even reduced temperatures, fostering diverse dislocation types and intricate networks, ultimately enhancing dislocation plasticity.

Keyword:

Author Community:

  • [ 1 ] [Chen, Yujie]Zhejiang Univ, Ctr Electron Microscopy, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China
  • [ 2 ] [Fang, Yan]Zhejiang Univ, Ctr Electron Microscopy, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China
  • [ 3 ] [Zou, Jiawei]Zhejiang Univ, Ctr Electron Microscopy, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China
  • [ 4 ] [Yu, Qian]Zhejiang Univ, Ctr Electron Microscopy, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China
  • [ 5 ] [Chen, Yujie]Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China
  • [ 6 ] [Fang, Yan]Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China
  • [ 7 ] [Zou, Jiawei]Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China
  • [ 8 ] [Yu, Qian]Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China
  • [ 9 ] [Chen, Yujie]Tsinghua Univ, Sch Mat Sci & Engn, Beijing Natl Ctr Electron Microscopy, Beijing 100084, Peoples R China
  • [ 10 ] [Gu, Lin]Tsinghua Univ, Sch Mat Sci & Engn, Beijing Natl Ctr Electron Microscopy, Beijing 100084, Peoples R China
  • [ 11 ] [Chen, Yujie]Tsinghua Univ, Sch Mat Sci & Engn, Lab Adv Mat, Beijing 100084, Peoples R China
  • [ 12 ] [Gu, Lin]Tsinghua Univ, Sch Mat Sci & Engn, Lab Adv Mat, Beijing 100084, Peoples R China
  • [ 13 ] [Fang, Yan]Univ Hong Kong, Dept Mech Engn, Hong Kong 999077, Peoples R China
  • [ 14 ] [Cheng, Pengming]Xi An Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China
  • [ 15 ] [Liu, Gang]Xi An Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China
  • [ 16 ] [Ke, Xiaoxing]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing Key Lab Microstruct & Properties Solids, Beijing 100124, Peoples R China
  • [ 17 ] [Zhang, Manchen]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing Key Lab Microstruct & Properties Solids, Beijing 100124, Peoples R China
  • [ 18 ] [Ding, Jun]Xi An Jiao Tong Univ, Ctr Alloy Innovat & Design, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China
  • [ 19 ] [Zhang, Bozhao]Xi An Jiao Tong Univ, Ctr Alloy Innovat & Design, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China
  • [ 20 ] [Zhang, Qinghua]Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Collaborat Innovat Ctr Quantum Matter, Beijing 100190, Peoples R China

Reprint Author's Address:

  • [Yu, Qian]Zhejiang Univ, Ctr Electron Microscopy, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China;;[Yu, Qian]Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China;;[Gu, Lin]Tsinghua Univ, Sch Mat Sci & Engn, Beijing Natl Ctr Electron Microscopy, Beijing 100084, Peoples R China;;[Gu, Lin]Tsinghua Univ, Sch Mat Sci & Engn, Lab Adv Mat, Beijing 100084, Peoples R China;;[Liu, Gang]Xi An Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China;;[Ding, Jun]Xi An Jiao Tong Univ, Ctr Alloy Innovat & Design, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China;;

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Source :

NATURE COMMUNICATIONS

Year: 2024

Issue: 1

Volume: 15

1 6 . 6 0 0

JCR@2022

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 13

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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