The　effect　of　248　nm　excimer　laser　irradiation　on　the　photoluminescence　and　electrical　properties　of　ZnO　thin　films　under　different　atmospheres　(air,　oxygen　and　nitrogen)　is　investigated.　Based　on　Gaussian　curve,　the　photoluminescence　spectra　of　ZnO　thin　films　irradiated　by　laser　under　different　atmospheres　are　fitted,　and　the　photoluminescence　peaks　around　3.31,　3.28,　3.247,　3.1　eV　are　assigned　and　analyzed　in　mechanism.　After　laser　irradiation,　ultraviolet　(UV)　emission　is　obviously　lower　and　shows　a　little　red-shift,　while　D0X-1LO　and　D0X-2LO　transitions　merges　into　one　peak.　After　laser　irradiation　under　oxygen　rich　atmosphere,　the　acceptor　density　of　ZnO　thin　films　increases,　and　the　donor　density　decreases.　After　laser　irradiation　under　oxygen　deficiency　atmosphere,　the　acceptor　density　of　ZnO　thin　films　decreases,　and　the　donor　density　increases.　After　laser　irradiation,　the　resistivity　of　ZnO　thin　films　is　decreased　by　three　orders　of　magnitude,　carrier　concentration　is　increased　by　two　orders　of　magnitude,　and　carrier　mobility　is　increased　by　one　orders　of　magnitude.