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Author:

Qiang, Wanzhi (Qiang, Wanzhi.) | Wu, Qi (Wu, Qi.) | Long, Lianchun (Long, Lianchun.)

Indexed by:

EI Scopus SCIE

Abstract:

The rapid development of shear bands (SBs) in nanocrystalline Cu is prone to lead to structural failure, while coarse crystalline Cu with high strain hardening capacity can effectively inhibit the growth of SBs. Heterogeneous laminate (HL) has a structure of alternating soft and hard domains, which dramatically increases ductility while reducing strength loss. In this work, molecular dynamics (MD) simulations revealed how SBs in the HL-Cu during the stable plastic flow stage (the applied strain of 10 similar to 20 %) strengthen the material. It is suggested that when SBs are uniformly and densely distributed in the structure, the strain gradient strengthening effect in the neighboring regions is significantly increased. Moreover, the efficiency of strain hardening can be maximized when the width of the interface-affected-zone (Defined as the region where a significant linear change in strain occurs, i.e., a strain gradient exists, located at the junction of the soft and hard domains.) caused by the uneven distribution of geometrically necessary dislocations (GNDs) is exactly the same as the layer thickness. The results show that the strength of HL can be increased by more than 14 % by reducing the layer thickness by half.

Keyword:

Geometrically necessary dislocations Shear bands Heterogeneous laminates Strain hardening Interface-affected-zones Cu

Author Community:

  • [ 1 ] [Qiang, Wanzhi]Beijing Univ Technol, Sch Math Stat & Mech, Beijing 100124, Peoples R China
  • [ 2 ] [Wu, Qi]Beijing Univ Technol, Sch Math Stat & Mech, Beijing 100124, Peoples R China
  • [ 3 ] [Long, Lianchun]Beijing Univ Technol, Sch Math Stat & Mech, Beijing 100124, Peoples R China

Reprint Author's Address:

  • [Wu, Qi]Beijing Univ Technol, Sch Math Stat & Mech, Beijing 100124, Peoples R China;;

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Source :

MATERIALS TODAY COMMUNICATIONS

Year: 2024

Volume: 40

3 . 8 0 0

JCR@2022

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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