In　order　to　meet　the　need　of　solid　state　white　light　illumination　and　variable　wavelength　light　source　used　in　optical　communication,　based　on　the　analysis　of　the　property　of　the　reverse　biased　tunnel　junction,　we　design　monolithic-integrated　dual-wavelength　light　emitting　diodes　which　are　connected　by　a　reverse　biased　tunnel　junction.　By　metal　organic　chemical　vapor　deposition　(MOCVD)　on　a　GaAs　substrate　in　a　single　step,　we　grew　epitaxially　this　device　that　can　emit　two　kinds　of　wavelengths　of　light　simultaneously.　This　kind　of　monolithic　integration　device　consists　of　two　active　regions,　an　AlGaInP　multi-quantum　well　active　region　and　a　GaInP　multi-quantum　well　active　region,　which　are　connected　by　a　reverse　biased　tunnel　junction.　Through　the　process,　we　fabricated　the　LEDs.　At　20　mA　Dc　injection　current,　the　devices　can　emit　wavelengths　of　626　nm　and　639　nm　at　the　same　time,　the　output　light　intensity　is　127　mcd,　and　the　forward　voltage　is　4.17　V.　The　test　results　are　compared　with　those　of　the　traditional　one-active-region　light　emitting　diodes.　The　output　light　intensity　of　dual-wavelength　LEDs　is　higher　than　that　of　traditional　LEDs.　The　forward　voltage　of　dual-wavelength　LEDs　is　not　high.