In　this　paper,　the　electronic　properties　and　optical　absorption　characteristics　of　Indium　arsenide　(InAs)　nanowires　with　different　defects,　including　antisite　defects,　vacancy　defects,　and　interstitial　defects,　at　various　locations　such　as　the　core　layer,　subsurface,　and　surface,　were　investigated　using　first-principles　calculations.　The　results　indicate　that　InAs　nanowires　with　defects　create　new　impurity　energy　levels　in　the　energy　band　structure,　with　InAs,　Asi,　and　VIn　acting　as　acceptors　and　AsIn,　Ini,　and　VAs　acting　as　donors,　rendering　the　InAs　nanowires　p-type　or　n-type.　Furthermore,　defects　disrupt　the　absorption　properties　of　the　nanowires　at　the　peak　of　the　absorption　spectrum　in　the　ultraviolet　region,　whereas　defects　positively　affect　the　light　absorption　of　InAs　nanowires　in　the　visible　and　infrared　light　regions.　In　particular,　it　is　in　the　infrared　light　region　that　the　redshift　of　the　VIn　defect　model　is　most　pronounced　and　enhances　the　infrared　absorption　of　InAs　nanowires.　©　2024　SPIE.