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作者:

Chen, Zihuan (Chen, Zihuan.) | Duan, Wenyan (Duan, Wenyan.) | Zhao, Chunyang (Zhao, Chunyang.) | Wang, Xuye (Wang, Xuye.) | Jin, Baojie (Jin, Baojie.) | Hu, Chuanqi (Hu, Chuanqi.) | Jia, Qingfeng (Jia, Qingfeng.) | Li, Shan (Li, Shan.) | Liu, Bingshan (Liu, Bingshan.) | Wang, Gong (Wang, Gong.) | Zhang, Dongyun (Zhang, Dongyun.) (学者:张冬云)

收录:

EI Scopus SCIE

摘要:

Vat photopolymerization 3D printing provides a novel approach for preparing broadband wave-transparent Si3N4/(3-SiAlON composite ceramics. This paper oxidized raw powder to introduce low dielectric phases (SiO2) and overcome the low curing depth of alpha-Si3N4. The solid content of oxidized alpha-Si3N4 was increased to 50 vol% for the first time by modification with dispersant. The selected print thickness of 50 mu m was the highest known for Si3N4 vat photopolymerization 3D printing, greatly improving printing efficiency. Finally, Si3N4/(3-SiAlON composite ceramics were sintered in the range of 1600-1800 degrees C, and the mechanical and dielectric properties were systematically studied. The composite ceramics sintering at 1780 degrees C had a maximum bending strength of 236 +/- 16 MPa, and the real permittivity was 4.83. At 1800 degrees C the porosity increased resulting in bending strength decreased to 109 +/- 4 MPa, and the real permittivity to 3.23. This study filled the gap in the posttreatment of oxidized alpha-Si3N4 and guided the application of Si3N4/(3-SiAlON composite ceramics in the field of wave-transparent.

关键词:

Powder oxidation Si 3 N 4 /(3-SiAlON composite ceramics Broadband wave-transparent ceramics Vat photopolymerization 3D printing

作者机构:

  • [ 1 ] [Chen, Zihuan]Chinese Acad Sci, Technol & Engn Ctr Space Utilizat, Key Lab Space Mfg Technol SMT, Beijing 100094, Peoples R China
  • [ 2 ] [Duan, Wenyan]Chinese Acad Sci, Technol & Engn Ctr Space Utilizat, Key Lab Space Mfg Technol SMT, Beijing 100094, Peoples R China
  • [ 3 ] [Hu, Chuanqi]Chinese Acad Sci, Technol & Engn Ctr Space Utilizat, Key Lab Space Mfg Technol SMT, Beijing 100094, Peoples R China
  • [ 4 ] [Jia, Qingfeng]Chinese Acad Sci, Technol & Engn Ctr Space Utilizat, Key Lab Space Mfg Technol SMT, Beijing 100094, Peoples R China
  • [ 5 ] [Li, Shan]Chinese Acad Sci, Technol & Engn Ctr Space Utilizat, Key Lab Space Mfg Technol SMT, Beijing 100094, Peoples R China
  • [ 6 ] [Liu, Bingshan]Chinese Acad Sci, Technol & Engn Ctr Space Utilizat, Key Lab Space Mfg Technol SMT, Beijing 100094, Peoples R China
  • [ 7 ] [Wang, Gong]Chinese Acad Sci, Technol & Engn Ctr Space Utilizat, Key Lab Space Mfg Technol SMT, Beijing 100094, Peoples R China
  • [ 8 ] [Chen, Zihuan]Beijing Univ Technol, Inst Laser Engn, Sch Phys & Optoelect Engn, Beijing 100124, Peoples R China
  • [ 9 ] [Zhao, Chunyang]Beijing Univ Technol, Inst Laser Engn, Sch Phys & Optoelect Engn, Beijing 100124, Peoples R China
  • [ 10 ] [Zhang, Dongyun]Beijing Univ Technol, Inst Laser Engn, Sch Phys & Optoelect Engn, Beijing 100124, Peoples R China
  • [ 11 ] [Wang, Xuye]Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
  • [ 12 ] [Jin, Baojie]Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China

通讯作者信息:

  • [Duan, Wenyan]Chinese Acad Sci, Technol & Engn Ctr Space Utilizat, Key Lab Space Mfg Technol SMT, Beijing 100094, Peoples R China;;[Zhang, Dongyun]Beijing Univ Technol, Inst Laser Engn, Sch Phys & Optoelect Engn, Beijing 100124, Peoples R China;;

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来源 :

CERAMICS INTERNATIONAL

ISSN: 0272-8842

年份: 2024

期: 18

卷: 50

页码: 32549-32560

5 . 2 0 0

JCR@2022

被引次数:

WoS核心集被引频次:

SCOPUS被引频次: 4

ESI高被引论文在榜: 0 展开所有

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