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作者:

Yu, Xin (Yu, Xin.) | Guo, Wei-Ling (Guo, Wei-Ling.) | Fan, Xing (Fan, Xing.) | Bai, Jun-Xue (Bai, Jun-Xue.) | Cheng, Shun-Bo (Cheng, Shun-Bo.) | Han, Yu (Han, Yu.)

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摘要:

51 V high voltage LED (HV LED) was designed and fabricated. Firstly, the HV LED was tested by large current attack, then the damage reason was analyzed. The key part's thermal parameters distribution model of HV LED was simulated by using finite element analysis software ANSYS, and the steady distribution of temperature was achieved. By analyzing the infrared thermal image, the reason of HV LED failure after large current attack was gotten. The core particle electrode burned at the connection part which was thin and narrow, so the resistance was large. It provided a good reference for the sequence design of more reliable HV LED. Meanwhile, the chips were packaged into white lamp with color temperature of 5000 K and blue lamp, respectively. The thermal resistance of the white lamp was about 4°C/W higher than the blue lamp without phosphor coating, and it was also higher than the conventional 1 W LED. The deep groove structure and numerous interconnected electrode structure of HV LED may be the reason of the thermal performance of high voltage LED worse than the conventional 1 W LED.

关键词:

Electrodes Gallium nitride Heat resistance III-V semiconductors Light emitting diodes Thermoanalysis

作者机构:

  • [ 1 ] [Yu, Xin]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China
  • [ 2 ] [Guo, Wei-Ling]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China
  • [ 3 ] [Fan, Xing]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China
  • [ 4 ] [Bai, Jun-Xue]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China
  • [ 5 ] [Cheng, Shun-Bo]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China
  • [ 6 ] [Han, Yu]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China

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来源 :

Chinese Journal of Luminescence

ISSN: 1000-7032

年份: 2014

期: 2

卷: 35

页码: 213-217

被引次数:

WoS核心集被引频次: 0

SCOPUS被引频次: 1

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