GaN-based　high-voltage　green　light-emitting　diodes　were　biased　by　negative　Human-Body-Mode　electrostatic　discharge　(ESD)　with　-500,　-1　000,　-2　000,　-3　000,　-4　000,　-5　000　and　-6　000　V.　The　I-V　characteristic　and　luminous　flux　under　different　electrostatic　shock　voltages　were　comparative　analyzed　after　each　shock.　The　results　show　that　the　LED　has　a　soft　breakdown　which　accompanied　with　apparent　increased　reverse　leakage　current　and　unapparent　luminous　flux　change,　which　due　to　the　generation　of　defect　after　ESD　stressing　at　-500,　-1　000,　-2　000,　-3　000　and　-4　000V;　When　the　device　was　biased　to　-5　000　V　and　-6　000　V,　a　sharp　decrease　of　luminous　flux　appears,　even　decay　to　50%　of　light　output　than　before　stressing.　And　forward　voltage　and　reverse　leakage　current　show　a　large　degree　of　decrease　and　increase　respectively　after　ESD　shock　of　-6000V,　which　is　due　to　the　thermal　model　breakdown　at　this　moment.　The　thermal　model　breakdown　make　temperature　rise　rapidly　and　form　a　melting　channel,　which　disabled　the　LED　eventually.