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Author:

Qi, Chao (Qi, Chao.) | Ma, Yutian (Ma, Yutian.) | Qi, Yanfei (Qi, Yanfei.) | Zhang, Wenjie (Zhang, Wenjie.) | Shen, Qi (Shen, Qi.) | Wang, Bo (Wang, Bo.) (Scholars:王波)

Indexed by:

EI Scopus SCIE

Abstract:

Tungsten (W) is considered the prime candidate for plasma-facing materials (PFMs) in future fusion devices. However, the surface blistering induced by hydrogen isotope irradiation can significantly alter the surface morphology of W, thereby severely impacting its service lifetime. Recent studies have shown that high entropy alloys (HEAs) exhibit excellent radiation resistance. This work focuses on investigating the H+ irradiation effects on low-activity W-based HEAs. A composite target was prepared using a splicing method, and WTaZrCrVTiAl HEA films with an amorphous structure were deposited by magnetron sputtering. Comparative experiments on the HEA film and pure W film under H+ irradiation conditions revealed that the blister dose threshold of the HEA film far exceeds that of the pure W film, which implies that they have more excellent resistance to H+ irradiation.

Keyword:

Nuclear materials Metallic composites Radiation damage

Author Community:

  • [ 1 ] [Qi, Chao]Beijing Univ Technol, Fac Mat & Mfg, Beijing 100124, Peoples R China
  • [ 2 ] [Shen, Qi]Beijing Univ Technol, Fac Mat & Mfg, Beijing 100124, Peoples R China
  • [ 3 ] [Wang, Bo]Beijing Univ Technol, Fac Mat & Mfg, Beijing 100124, Peoples R China
  • [ 4 ] [Ma, Yutian]Chinese Acad Sci, Inst Elect Engn, Beijing 100190, Peoples R China
  • [ 5 ] [Qi, Yanfei]North China Univ Sci & Technol, Coll Met & Energy, Tangshan 063210, Peoples R China
  • [ 6 ] [Zhang, Wenjie]Beihang Univ, Dept Phys, Beijing 100191, Peoples R China

Reprint Author's Address:

  • [Wang, Bo]Beijing Univ Technol, Fac Mat & Mfg, Beijing 100124, Peoples R China;;[Qi, Yanfei]North China Univ Sci & Technol, Coll Met & Energy, Tangshan 063210, Peoples R China;;

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Source :

MATERIALS LETTERS

ISSN: 0167-577X

Year: 2024

Volume: 374

3 . 0 0 0

JCR@2022

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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